Press pack Insulated Gate Bipolar Transistors in HVDC systems
Improving the reliability of PP IGBTs by decreasing the risk of package failure.
Project leader
Dates
January 2018 to January 2021
Project staff
Dr Haimeng Wu, Mr Bowen Gu
Sponsors
China Southern Power Grid
Partners
Dalian University of Technology, Dalian University of Marine, Leicester University
Description
Press pack Insulated Gate Bipolar Transistors (PP IGBT) are gaining more attention in HVDC power transmission systems. This is due to their high power density and high reliability compared with conventional power modules.
But the reliability of PP IGBT remains a focus for engineers. This is especially true for package-level failure. Such a failure is different from conventional power modules.
Usually, condition monitoring of PP IGBTs is carried out by estimating the chip temperature. This is challenging. This project focuses on a new parameter, deformation of the upper lid groove. This parameter can show the health condition of the PP IGBT based on its unique packaging technique.