Improving the performance of SiC MOSFETs
This project investigates smaller and more efficient power converters.
Project leader
Dates
October 2017 to June 2020
Project staff
Mr Xiang Wang, Dr Haimeng Wu
Sponsors
EPSRC
Description
Many electronic devices use Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). They switch and amplify electronic signals.
SiC (Silicon Carbide) MOSFETs allow us to build smaller and more efficient power converters. But they are less reliable compared to Silicon MOSFETs. The gate driving signal for a SiC MOSFET needs to be tailored to exploit its advantages to the full.
There are two modes in the gate driving system.
In operating mode, optimised signals reduce switching oscillation as well as switching losses. In the detection mode, various detection signals for condition monitoring evaluate the health of the device.
We are investigating a fully-controlled gate driver circuit for SiC MOSFETs. The project will improve the switching transients and evaluate the condition of the device.