Merve Yakut

• Email: m.t.yakut2@ncl.ac.uk

Supervisors

• Prof Anthony O’Neill
• Dr Sarah Olsen

Project description

Silicon Carbide is a wide band-gap semiconductor. It has exceptional electrical and other material properties. It has been studied for many years and used commercially for high performance devices. But it has very poor MOS (metal-oxide-semiconductor) current carrying capability.

A III-V semiconductor contains elements from groups III and V in the periodic table. Recent progress in III-V semiconductor MOS devices has suggested a new route to overcoming this challenge. The project will cover design, fabrication and characterisation aspects. It is closely linked to a major UK initiative funded by EPRSC (UPE) where Newcastle University are partners in the device theme.

Interests

Microfabrication, cleanroom, characterisation.

Qualifications

• MSc, BEng