Staff Profile
Professor Jon Goss
Professor of Materials Physics
- Email: jonathan.goss@ncl.ac.uk
- Telephone: +44 (0) 191 208 7288
- Personal Website: http://www.staff.ncl.ac.uk/j.p.goss
- Address: School of Mathematics, Statistics and Physics
Herschel Building
Newcastle University
Newcastle upon Tyne
NE1 7RU
Background
Introduction
Welcome to my University web page. I am a Professor in the School of Mathematics, Statistics and Physics, having arrived in Newcastle in November 2002. I am a member of staff in the Physics section of the School, with a research portfolio based on the first-principles simulation of defects in semiconductors, crystal surfaces, nano-structures and dielectrics, necessitating the use of parallel computing, some facilities for which are based here in Newcastle University.
Qualifications
- B.Sc. in Mathematics and Theoretical Physics, Exeter, 1992
- Ph.D "A First Principles Study of Defects in Semiconductors", Exeter 1997.
Previous Positions
- 1997-1999 Post-doctoral researcher, Physical Sciences, Dublin City University
- 1999-2002 Post-doctoral research, Dept Physics, Exeter University
- 2002-2007 EPSRC Advanced Research Fellow, Newcastle University
Memberships
Member of the Institute of Physics, and Chartered Physicist
Current Roles and Responsibilities
- Director of Education, School of Mathematics, Statistics and Physics
- University representative on University Learning and Teaching Review Panels (formerly Internal Subject Reviews) - this is the internal quality assurance audit process for taught programmes
- University representative on Programme Approval Committees
Former Roles
- Chair of the Board of Examiners (Electrical and Electronic Engineering)
- Newcastle Lead on the Diamond Science and Technology Centre for Doctoral Training
- Physics undergraduate admissions tutor
- Member of the Self-Assessment Team and Diversity Working Group for the Schools of Engineering and Maths, Stats and Physics
- Athena SWAN University Self-Assessment team member
- University Student Disciplinary Panel member
- Member of the Science, Agriculture and Science Faculty Graduate School Committee
- Director of Excellence in Learning and Teaching (Electrical and Electronic Engineering & Physics)
- Athena SWAN: School Academic Lead up to successful submission for Bronze award in 2015
- Chair of School Learning, Teaching and Student Experience Committee
- Member of the Science, Agriculture and Science Faculty Learning, Teaching and Student Experience Committee
- Member of the School Engagement Working Group
- Science, Agriculture and Science Faculty representative on the Cross-Faculty Learning, Teaching and Student Experience Committee
- Acting DPD for Electrical and Electronic Engineering programmes
- Stage 1 Tutor for EEE
- EEE Admissions tutor
- Visiting academic in Warwick University
Google scholar: Click here.
Teaching
Undergraduate Teaching
PHY8045: Quantum-mechanical modelling of nano-structures
Research
Profiles on Google Scholar and ResearchGate.
Research Interests
My current research is primarily under a project entitled "Defect Engineering", which relates to the use of quantum-chemical methods to analyse dopants and other defects in crystalline materials to predict their optical, electronic and other properties.
Diamond, although strictly a very effective electrical insulator, may be modified to conduct electricity, with projected applications in fields from high-power switches to particle-detection. Pure diamond is optically transparent (in the visible part of the e-m spectrum) but defects in the crystal lattice can change the colour to bright yellows, red, pink, green and blue. Although these "fancy" diamonds occur naturally, they are very rare and hence expensive. However, defects giving rise to bright colour can be synthesized using high-pressure and temperature techniques, sometimes involving irradiation. The quantum-chemical simulation of defects formed in the crystal lattice informs us as to the potential origins of colour and other properties such as thermal stability, allowing the gemologists to determine with some degree of precision which diamonds have been artificially enhanced, or treated to increase their value.
Other Expertise
The application and analysis of density-functional based quantum-chemical simulation programs also involves problems in visualisation.
Current Work
Although I principally study diamond-based problems, I am simultaneously pursuing research in other materials: silicon-carbide, silicon, germanium, oxides (mainly STO, PTO, BTO and ZnO), III-V compound semiconductors and nano-structures.
Future Research
I have a developing research interest in silicon and carbon based quantum structures for optical device application, as well as the role of surface functionalisation in such materials. Future research will also involve my interest in the quantum behaviour of light atomic species in solid solution.
Potential PhD Projects
- Point defects in diamond characterised by first principles simulations
- Simulations for doping and defects in functional metal oxides
- Surface treatments for novel electrode applications
- Growth processes and incorporation of defects during diamond CVD from first principles
- 2D materials for technological applications: from graphene to MoS2 using quantum chemical simulations
- Diffusion and aggregation of impurities in technologically relevant materials from first principles
- Silicon quantum dots: optical properties and the role of surface chemistry
Research Roles
2002-2007 Principal investigator in "Defect Engineering" project funded by the EPSRC under the Advanced Research Fellow initiative.
Postgraduate Supervision
I am currently co-supervising several PhD students at various stages of the PhD projects.
Esteem Indicators
Invited talks at international conferences:
- "Theory of H in diamond", Materials Research Society Spring Meeting, 2002 (San Fransisco, USA).
- "Theory of adsorbate and metal induced surface conductivity in diamond", Surface and Bulk Defects in CVD Diamond Films, VII 2002 (Hasselt, Belgium)
- "Interstitial aggregation in Si: A theoretical study", International conference on Extended Defects in Semiconductors, 2002 (Bologna, Italy).
- "Donor and acceptor states in diamond", 14th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide, 2003 (Salzburg, Austria).
- "Hydrogen in diamond - a theoretician's perspective", Debeers Diamond Conference, 2004 (Keynote, Warwick University, UK)
- "Defects in diamond: Quantum mechanical modelling for doping in diamond", International conference on the physics of semiconductors, 2004 (Flagstaff USA).
- "Calculated electrical levels and defect-related compensation in diamond", Gordon Research Conference on Defects in Semiconductors, 2004 (New London, USA).
- "Can impurity complexes yield n-type material?" Diamond Symposium, Materials Congress 2006, (London, UK)
- "Density functional calculations for bulk and transfer doping in diamond", Gordon Research Conference on Defects in Semiconductors, 2008 (New London, USA).
- "Diamond electronics? The thorny issue of impurity doping from a theoretical perspective", Capital Carbon, London 2008
- "Computation for materials science: modelling diamond", Debeers Diamond Conference, 2013 (Tutorial, Warwick University, UK)
- "Theory, computation and simulated reality", Debeers Diamond Conference, 2015 (Keynote, Warwick University, UK)
Invited departmental colloquia:
- Department of Chemistry, Bristol University, 2004.
- School of Physical Sciences, Dublin City University, 2004.
- Department of Physics, Sheffield University, 2005.
- School of Physics, Exeter University, 2005.
- School of Physics, King's College London, 2008
- Symposium organizer and chair for Carbon Materials Symposium at the Condensed Matter and Materials Physics conference, Royal Holloway, London, 2008.
- Institute of Physics representative on the British Carbon Group committee (2004-)
- Organising and Programme Committees for the international conference on Carbon (Carbon2006, Aberdeen)
- Referee for "Journal of Physics: Condensed Matter", "Physical Review", “Nature”, “Physica Status Solidi”, “Physica B”, “Diamond and Related Material”, and other publications.
- Guest Editor for the International Conference on Extended Defects in Semiconductors, 2001.
Publications
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Articles
- Prasad MK, Al-Ani OA, Goss JP, Mar JD. Charge transfer due to defects in hexagonal boron nitride/graphene heterostructures: An ab initio study. Physical Review Materials 2023, 7(9), 094003.
- Beattie JMA, Goss JP, Rayson MJ, Briddon PR. Structure and electron affinity of the 4H-SiC (0001) surfaces: A methodological approach for polar systems. Journal of Physics Condensed Matter 2021, 33(16), 165003.
- Beattie JMA, Goss JP, Rayson MJ, Briddon PR. Structure and electron affinity of (1 1 2¯ 0)–X 4H–SiC surface. Applied Surface Science 2020, 518, 145986.
- Ashfold MNR, Goss JP, Green BL, May PW, Newton ME, Peaker CV. Nitrogen in Diamond. Chemical Reviews 2020, 120(12), 5745–5794.
- Atumi MK, Goss JP, Briddon PR, Gsiea AM, Rayson MJ. Hyperfine interaction of H-divacancy in diamond. Results in Physics 2020, 16, 102860.
- Breeze BG, Meara CJ, Wu XX, Michaels CP, Gupta R, Diggle PL, Dale MW, Cann BL, Ardon T, D'haenens-Johansson UFS, Friel I, Rayson MJ, Briddon PR, Goss JP, Newton ME, Green BL. Doubly charged silicon vacancy center, Si-N complexes, and photochromism in N and Si codoped diamond. Physical Review B 2020, 101(18), 184115.
- Meara CJ, Rayson MJ, Briddon PR, Goss JP. Density functional investigation of boron incorporation in silicon-vacancy complexes. Diamond and Related Materials 2020, 109, 108016.
- Meara CJ, Rayson MJ, Briddon PR, Goss JP. A computational study of nanodiamond surface radicals and nitrogen-vacancy charge fluctuations. Journal of Physics and Chemistry of Solids 2020, 146, 109637.
- Beattie JMA, Goss JP, Rayson MJ, Briddon PR. Silicon and germanium terminated (0 0 1)-(2 x 1) diamond surface. Journal of Physics: Condensed Matter 2019, 31(39), 395001.
- Alsnani H, Goss JP, Briddon P, Rayson M, Horsfall AB. First Principles Study of the Stability and Diffusion Mechanism of a Carbon Vacancy in the Vicinity of a SiO2/4H–SiC Interface. Physica Status Solidi (A) Applications and Materials Science 2019, 216, 1900328.
- Beattie JMA, Goss JP, Rayson MJ, Briddon PR. Electron-affinity and surface-stability of aluminium-oxide terminated diamond surfaces. Diamond and Related Materials 2019, 94, 137-145.
- Meara CJ, Rayson MJ, Briddon PR, Goss JP. Density functional theory study on magnetically detecting positively charged nitrogen-vacancy center in diamond. Physical Review B 2019, 100(10), 104108.
- Rashid M, Idris MI, Horrocks BR, Healy N, Goss JP, Horsfall AB. Pore Wall Thinning of Mesoporous 4H-SiC by Sacrificial Oxidation. Crystal Research and Technology 2018, 53(9), 1800120.
- Al-Ani OA, Goss JP, Al-Hadidi M, Briddon PR, Rayson MJ, Cowern NEB. Voids in silicon as a sink for interstitial iron: A density functional study. Journal of Crystal Growth 2017, 468, 101-103.
- Al-Ani OA, Goss JP, Briddon PR, Rayson MJ, Cowern NEB. Interstitial Fe-pairs in silicon. Journal of Crystal Growth 2017, 468, 54-56.
- Al-Ani OA, Goss JP, Al-Hadidi M, Briddon PR, Rayson MJ, Cowern NEB. Impact of grain boundary structures on trapping iron. Journal of Crystal Growth 2017, 468, 448-451.
- Al-Hadidi M, Goss JP, Al-Ani OA, Briddon PR, Rayson MJ. Density functional calculations of carbon substituting for Zr in barium zirconate. Journal of Crystal Growth 2017, 468, 728-731.
- Rashid M, Tiwari AK, Goss JP, Rayson MJ, Briddon PR, Horsfall AB. Surface-state dependent optical properties of OH-, F-, and H-terminated 4H-SiC quantum dots. Physical Chemistry Chemical Physics 2016, 18, 21676-21685.
- Rashid M, Horrocks BR, Healy N, Goss JP, Horsfall AB. Optical properties of mesoporous 4H-SiC prepared by anodic electrochemical etching. Journal of Applied Physics 2016, 120(19), 194303.
- Al-Ani OA, Sabaawi AMA, Goss JP, Cowern NEB, Briddon PR, Rayson MJ. Investigation into efficiency-limiting defects in mc-Si solar cells. Solid State Phenomena 2016, 242, 96-101.
- Al-Hadidi M, Goss JP, Briddon PR, Al-Hamadany R, Ahmed M, Rayson MJ. First-principles investigation of carbon substitution for lead in ferroelectric lead titanate. Ferroelectrics 2016, 498(1), 12-17.
- Al-Hadidi M, Goss JP, Briddon PR, Al-hamadany R, Ahmed M, Rayson MJ. Association of oxygen vacancies with carbon impurity in strontium titanate: first principles calculations. Ferroelectrics 2016, 497(1), 9-14.
- Peaker CV, Atumi MK, Goss JP, Briddon PR, Horsfall AB, Rayson MJ, Jones R. Assignment of 13C hyperfine interactions in the P1-center in diamond. Diamond and Related Materials 2016, 70, 118-123.
- Al-Ani OA, Goss JP, Cowern NEB, Briddon PR, Al-Hadidi M, Al-Hamadany R, Rayson MJ. A density functional study of iron segregation at ISFs and Sigma-5-(001) GBs in mc-Si. Solid State Phenomena 2016, 242, 224-229.
- Rashid M, Tiwari AK, Wood N, Briddon P, Goss JP, Rayson MJ, Wright N, Horsfall AB. Tuning Optoelectronic Properties of 4H-SiC QDs Using-H,-OH and-F Surface Functionalisation. Materials Science Forum 2015, 821-823, 375-378.
- Peaker CV, Goss JP, Briddon PR, Horsfall AB, Rayson MJ. The vacancy-hydrogen defect in diamond: A computational study. Physica Status Solidi(A) 2015, 212(11), 2431-2436.
- Wells GH, Hunt MRC, Hopf T, Vassilevski K, Escobedo-Cousin E, Horsfall AB, Goss JP, O'Neill A. Facile technique for the removal of metal contamination from graphene. Journal of Vacuum Science & Technology B 2015, 33(5), 051802.
- Hopf T, Vassilevski K, Escobedo-Cousin E, King P, Wright NG, O'Neill AG, Horsfall AB, Goss J, Wells G, Hunt M. Electrical Characterization of Epitaxial Graphene Field-Effect Transistors with High-k Al2O3 Gate Dielectric Fabricated on SiC Substrates. Materials Science Forum 2015, 821-823, 937-940.
- Peaker CV, Goss JP, Briddon PR, Horsfall AB, Rayson MJ. Di-nitrogen-vacancy-hydrogen defects in diamond: a computational study. Physica Status Solidi (A) 2015, 212(11), 2616-2620.
- Jones R, Goss JP, Pinto H, Palmer DW. Diffusion of nitrogen in diamond and the formation of A-centres. Diamond and Related Materials 2015, 53, 35-39.
- Cowern NEB, Simdyankin S, Goss JP, Napolitani E, DeSalvador D, Bruno E, Mirabella S, Ahn C, Bennett NS. Comment on "Diffusion of n-type dopants in germanium" [Appl. Phys. Rev. 1, 011301 (2014)] . Applied Physics Reviews 2015, 2, 036101.
- Al-Hadidi M, Goss JP, Briddon PR, AL-Hamadany R, Ahmed M, Rayson MJ. Carbon impurities in SrTiO3 from first principles. Modelling and Simulation in Materials Science and Engineering 2015, 23, 015002.
- Tiwari AK, Goss JP, Briddon PR, Horsfall AB, Wright NG, Jones R, Rayson MJ. Unexpected change in the electron affinity of diamond caused by the ultra-thin transition metal oxide films. Europhysics Letters 2014, 108(4), 46005.
- Escobedo-Cousin E, Vassilevski K, Hopf T, Wright N, O'Neill AG, Horsfall AB, Goss JP. Solid Phase Growth of Graphene on Silicon Carbide by Nickel Silicidation: Graphene Formation Mechanisms. Materials Science Forum 2014, 778-780, 1162-1165.
- Goss JP, Briddon PR, Hill V, Jones R, Rayson MJ. Identification of the structure of the 3107 cm-1 H-related defect in diamond. Journal of Physics: Condensed Matter 2014, 26(14), 145801.
- Hopf T, Vassilevski KV, Escobedo-Cousin E, King PJ, Wright NG, O'Neill AG, Horsfall AB, Goss JP, Wells GH, Hunt MRC. Dirac point and transconductance of top-gated graphene field-effect transistors operating at elevated temperature. Journal of Applied Physics 2014, 116(15), 154504.
- Wells GH, Hopf T, Vassilevski KV, Escobedo-Cousin E, Wright NG, Horsfall AB, Goss JP, O'Neill AG, Hunt MRC. Determination of the adhesion energy of graphene on SiC(0001) via measurement of pleat defects. Applied Physics Letters 2014, 105(19), 193109.
- Evans DA, Vearey-Roberts AR, Roberts OR, Williams GT, Cooil SP, Langstaff DP, Cabailh G, McGovern IT, Goss JP. Transport and optical gaps and energy band alignment at organic-inorganic interfaces. Journal of Applied Physics 2013, 114(12).
- Al-Hamadany R, Goss JP, Briddon PR, Mojarad SA, Al-Hadidi M, O'Neill AG, Rayson MJ. Oxygen vacancy migration in compressively strained SrTiO3. Journal of Applied Physics 2013, 113(2), 024108.
- Escobedo-Cousin E, Vassilevski K, Hopf T, Wright N, O'Neill A, Horsfall A, Goss J, Cumpson P. Optimising the Growth of Few-Layer Graphene on Silicone Carbide by Nickel Silicidation. Materials Science Forum 2013, 740-742, 121-124.
- Escobedo-Cousin E, Vassilevski K, Hopf T, Wright N, O'Neill A, Horsfall A, Goss J, Cumpson PJ. Local solid phase growth of few-layer graphene on silicon carbide from nickel silicide supersaturated with carbon. Journal of Applied Physics 2013, 113(11), 114309.
- Nagareddy VK, Chan HK, Hernandez SC, Wheeler VD, Nyakiti LO, Myers-Ward RL, Eddy CR, Goss JP, Wright NG, Walton SG, Gaskill DK, Horsfall AB. Improved Chemical Detection and Ultra-Fast Recovery Using Oxygen Functionalized Epitaxial Graphene Sensors. IEEE Sensors Journal 2013, 13(8), 2810-2817.
- AL-Hamadany R, Goss JP, Briddon PR, Mojarad SA, O'Neill AG, Rayson MJ. Impact of tensile strain on the oxygen vacancy migration in SrTiO3: Density functional theory calculations. Journal of Applied Physics 2013, 113(22), 224108-1-224108-8.
- Atumi MK, Goss JP, Briddon PR, Shrif FE, Rayson MJ. Hyperfine interactions at nitrogen interstitial defects in diamond. Journal of Physics: Condensed Matter 2013, 25(6), 065802.
- Cowern NEB, Simdyankin S, Ahn C, Bennett NS, Goss JP, Hartmann JM, Pakfar A, Hamm S, Valentin J, Napolitani E, De Salvador D, Bruno E, Mirabella S. Extended point defects in crystalline materials: Ge and Si. Physical Review Letters 2013, 110(15), 155501.
- Nagareddy VK, Chan HK, Hernandez SC, Wheeler VD, Myers-Ward RL, Nyakiti LO, Eddy CR, Walton SG, Goss JP, Wright NG, Gaskill DK, Horsfall AB. Detection of polar chemical vapors using epitaxial graphene grown on SiC (0001). Applied Physics Letters 2013, 102(17), 173103-1-173103-5.
- Atumi MK, Goss JP, Briddon PR, Rayson MJ. Atomistic modeling of the polarization of nitrogen centers in diamond due to growth surface orientation. Physical Review B 2013, 88(24), 245301.
- Tiwari AK, Goss JP, Briddon PR, Wright NG, Horsfall AB, Jones R, Pinto H, Rayson MJ. Thermodynamic stability and electronic properties of F- and Cl-terminated diamond. Physica Status Solidi A 2012, 209(9), 1709-1714.
- Pinto H, Jones R, Palmer DW, Goss JP, Briddon PR, Oberg S. On the diffusion of NV defects in diamond. Physica Status Solidi A 2012, 209(9), 1765-1768.
- Mojarad SA, Goss JP, Kwa KSK, Zhou ZY, Al-Hamadany RAS, Appleby DJR, Ponon NK, O'Neill A. Leakage current asymmetry and resistive switching behavior of SrTiO3. Applied Physics Letters 2012, 101(17), 173507.
- Markevich A, Jones R, Oberg S, Rayson MJ, Goss JP, Briddon PR. First-principles study of hydrogen and fluorine intercalation into graphene-SiC(0001) interface. Physical Review B 2012, 86(4), 045453.
- Pinto H, Jones R, Palmer DW, Goss JP, Tiwari AK, Briddon PR, Wright NG, Horsfall AB, Rayson MJ, Oberg S. First-principles studies of the effect of (001) surface terminations on the electronic properties of the negatively charged nitrogen-vacancy defect in diamond. Physical Review B 2012, 86(4), 045313.
- Tiwari AK, Goss JP, Briddon PR, Wright NG, Horsfall AB, Rayson MJ. Electronic and structural properties of diamond (001) surfaces terminated by selected transition metals. Physical Review B 2012, 86(15), 155301.
- Tiwari AK, Goss JP, Briddon PR, Wright NG, Horsfall AB, Rayson MJ. Effect of different surface coverages of transition metals on the electronic and structural properties of diamond. Physica Status Solidi A 2012, 209(9), 1697-1702.
- Tiwari AK, Goss JP, Briddon P, Wright NG, Horsfall AB. Density Functional Simulations of Transition Metal Terminated (001)-Diamond Surfaces. Materials Science Forum 2012, 717-720, 1311-1314.
- Tiwari AK, Goss JP, Briddon PR, Wright NG, Horsfall AB, Rayson MJ. Bromine functionalisation of diamond: An ab initio study. Physica Status Solidi A 2012, 209(9), 1703-1708.
- Mojarad SA, Goss JP, Kwa KSK, Petrov PK, Zou B, Alford N, O'Neill A. Anomalous resistive switching phenomenon. Journal of Applied Physics 2012, 112(12), 124516.
- Mojarad SA, Kwa KSK, Goss JP, Zhou Z, Ponon NK, Appleby DJR, Al Hamadany RAS, O'Neill A. A comprehensive study on the leakage current mechanisms of Pt/SrTiO3/Pt capacitor. Journal of Applied Physics 2012, 111(1), 014503.
- Pinto H, Palmer DW, Jones R, Goss JR, Briddon PR, Oberg S. Ab Initio Studies of Fluorine Passivation on the Electronic Structure of the NV- Defect in Nanodiamond. Journal of Nanoscience and Nanotechnology 2012, 12(11), 8589-8593.
- Pinto H, Jones R, Palmer DW, Goss JP, Briddon PR, Oberg S. Theory of the surface effects on the luminescence of the NV- defect in nanodiamond. Physica Status Solidi A: Applications and Materials Science 2011, 208(9), 2045-2050.
- Ulbricht R, van der Post ST, Goss JP, Briddon PR, Jones R, Khan RUA, Bonn M. Single substitutional nitrogen defects revealed as electron acceptor states in diamond using ultrafast spectroscopy. Physical Review B 2011, 84(16), 165202.
- Nagareddy VK, Nikitina IP, Gaskill DK, Tedesco JL, Myers-Ward RL, Eddy CR, Goss JP, Wright NG, Horsfall AB. High temperature measurements of metal contacts on epitaxial graphene. Applied Physics Letters 2011, 99(7), 073506.
- Goss JP, Briddon PR. Calculated strain response of vibrational modes for H-containing point defects in diamond. Physical Chemistry Chemical Physics 2011, 13(24), 11488-11494.
- Tiwari AK, Goss JP, Briddon PR, Wright NG, Horsfall AB, Jones R, Pinto H, Rayson MJ. Calculated electron affinity and stability of halogen-terminated diamond. Physical Review B 2011, 84(24), 245305.
- Goss JP, Ewels CP, Briddon PR, Fritsch E. Bistable N-2-H complexes: The first proposed structure of a H-related colour-causing defect in diamond. Diamond and Related Materials 2011, 20(7), 896-901.
- Pinto H, Jones R, Goss JP, Briddon PR. Unexpected change in the electronic properties of the Au-graphene interface caused by toluene. Physical Review B 2010, 82(12), 125407.
- Pinto H, Jones R, Goss J, Briddon P. Unexpected change in the electronic properties of the Au-graphene interface caused by toluene. Physical Review B: Condensed Matter and Materials Physics 2010, 82(12), 125407.
- Goss JP, Briddon PR, Pinto H, Jones R. Optically active point defects in high quality single crystal diamond. Physica Status Solidi A: Applications and Materials Science 2010, 207(9), 2049-2053.
- Pinto H, Jones R, Goss JP, Briddon PR. Mechanisms of doping graphene. Physica Status Solidi. A: Applications and Materials Science 2010, 207(9), 2131-2136.
- Liggins S, Newton M, Goss J, Briddon P, Fisher D. Identification of the dinitrogen (001) split interstitial H1a in diamond. Physical Review B: Condensed Matter and Materials Physics 2010, 81(8), 085214.
- Liggins S, Newton ME, Goss JP, Briddon PR, Fisher D. Identification of the dinitrogen < 001 > split interstitial H1a in diamond. Physical Review B 2010, 81(8), 085214.
- D'Haenens-Johansson UFS, Edmonds AM, Newton ME, Goss JP, Briddon PR, Baker JM, Martineau PM, Khan RUA, Twitchen DJ, Williams SD. EPR of a defect in CVD diamond involving both silicon and hydrogen that shows preferential alignment. Physical Review B 2010, 82(15), 155205.
- D'Haenens-Johansson U, Edmonds A, Newton M, Goss J, Briddon P, Baker J, Martineau P, Khan R, Twitchen D, Williams S. EPR of a defect in CVD diamond involving both silicon and hydrogen that shows preferential alignment. Physical Review B: Condensed Matter and Materials Physics 2010, 82(15), 155205.
- Etmimi KM, Goss JP, Briddon PR, Gsiea AM. A density functional theory study of models for the N3 and OK1 EPR centres in diamond. Journal of Physics: Condensed Matter 2010, 22(38), 385502.
- Jones R, Carlvalho A, Goss JP, Briddon PR. The self-interstitial in silicon and germanium. Materials Science and Engineering: B 2009, 159-160, 112-116.
- Guiot V, Suarez-Martinez I, Wagner P, Goss JP, Briddon PR, Allaf A, Ewels C. Structure and vibrational properties of oxohalides of vanadium. Inorganic Chemistry 2009, 48(8), 3660-3666.
- Galindo MA, Amantia D, Clegg W, Harrington RW, Eyre RJ, Goss JP, Briddon PR, McFarlane W, Houlton A. Self-assembly of a bis(adeninyl)-Cu(I) complex: a cationic nucleobase duplex mimic. Chemical Communications 2009, 2009(20), 2833-2835.
- Pinto H, Jones R, Goss JP, Briddon PR. p-type doping of graphene with F4-TCNQ. Journal of Physics: Condensed Matter 2009, 21(40), 402001.
- Etmimi K, Ahmed M, Briddon P, Goss J, Gsiea A. Nitrogen-pair paramagnetic defects in diamond: A density functional study. Physical Review B 2009, 79(20), 205207.
- MacLeod RM, Murray SW, Goss JP, Briddon PR, Eyre RJ. Model thermodynamics and the role of free-carrier energy at high temperatures: Nitrogen and boron pairing in diamond. Physical Review B 2009, 80(5), 054106.
- Etmimi KM, Goss JP, Briddon PR, Gsiea AM. Density functional studies of muonium in nitrogen aggregate containing diamond: the Mu(X) centre. Journal of Physics: Condensed Matter 2009, 21(36), 364211.
- Goss JP, Eyre RJ, Briddon PR, Mainwood A. Density functional simulations of noble-gas impurities in diamond. Physical Review B 2009, 80(8), 085204.
- Jones R, Goss JP, Briddon PR. Acceptor level of nitrogen in diamond and the 270-nm absorption band. Physical Review B 2009, 80(3), 033205.
- Goss JP, Eyre RJ, Briddon PR. Theoretical models for doping diamond for semiconductor applications. Physica Status Solidi B 2008, 245(9), 1679-1700.
- Eyre RJ, Goss JP, Briddon PR. The effect of progressive oxidation on the optical properties of small Silicon Quantum Dots: A computational study. Physical Review B 2008, 77(24), 245407.
- Eyre RJ, Goss JP, MacLeod RM, Briddon PR. Stability of singly hydrated silanone on silicon quantum dot surfaces: density functional simulations. Physical Chemistry Chemical Physics 2008, 10, 4495-4502.
- Jones R, Eberlein TAG, Briddon PR. On the doping of graphene. Physica Status Solidi. A: Applications and Materials Science 2008, 205(9), 2262-2264.
- Carvalho A, Jones R, Goss JP, Janke C, Öberg S, Briddon PR. First-principles study of the diffusion mechanisms of the self-interstitial in germanium. Journal of Physics: Condensed Matter 2008, 20(13), 135220.
- Carvalho A, Coutinho J, Jones R, Goss J, Barroso M, Briddon PR. First-principles study of Fe and FeAl defects in SiGe alloys. Physical Review B 2008, 78(12), 125208.
- Baker JM, van Wyk JA, Goss JP, Briddon PR. Electron paramagnetic resonance of sulfur at a split-vacancy site in diamond. Physical Review B 2008, 78(23), 235203.
- Eberlein TAG, Jones R, Goss JP, Briddon PR. Doping of graphene: Density functional calculations of charge transfer between GaAs and graphene and carbon nanostructures. Physical Review B 2008, 78(4), 045403.
- Goss JP, Briddon PR. Dissociation of B-H pairs in diamond as enhanced by electronic excitation and electron capture: Computational modeling. Physical Review B 2008, 77(3), 035211.
- Goss JP, Eyre RJ, Briddon PR. Bound substitutional impurity pairs in diamond: a density functional study. Journal of Physics: Condensed Matter 2008, 20(8), 085217.
- Goss JP, Briddon PR. Theoretical study of Li and Na as n-type dopants for diamond. Physical Review B 2007, 75(7), 075202.
- Carvalho A, Jones R, Goss J, Janke C, Coutinho J, Oberg S, Briddon PR. Self-interstitials and Frenkel pairs in electron-irradiated germanium. Physica B: Condensed Matter 2007, 401-402, 495-498.
- Carvalho A, Jones R, Janke C, Goss JP, Briddon PR, Coutinho J, Oberg S. Self-interstitial in germanium. Physical Review Letters 2007, 99(17), 175502.
- Eyre RJ, Goss JP, Briddon PR, Wardle MG. Multi-impurity complexes for n-type diamond: A computational study. Physica Status Solidi (A) Applications and Materials 2007, 204(9), 2971-2977.
- Goss JP, Rayson MJ, Briddon PR, Baker JM. Metastable Frenkel pairs and the W11-W14 electron paramagnetic resonance centers in diamond. Physical Review B 2007, 76(4), 045203.
- Eyre RJ, Goss JP, Briddon PR. Density functional study of oxygen migration processes for silicon quantum dots. Physical Review B 2007, 76(24), 245325.
- Goss JP, Briddon PR, Shaw MJ. Density functional simulations of silicon-containing point defects in diamond. Physical Review B 2007, 76(7), 075204.
- Eyre RJ, Goss JP, Briddon PR. A density functional study of oxygen migration processes for silicon quantum dots. Physical Review B 2007, 76(24), 245325.
- Goss JP, Briddon PR. Theory of boron aggregates in diamond: First-principles calculations. Physical Review B 2006, 73(8), 085204.
- Wardle MG, Goss JP, Briddon PR. Relationship between binding site and pressure dependence for defect-hydrogen complexes in ZnO. Applied Physics Letters 2006, 88(26), 261906.
- Goss JP, Briddon PR, Jones R, Heggie MI. Platelets and the <110>a0/4 {001} stacking fault in diamond. Physical Review B 2006, 73(11), 115204.
- Goss JP, Shaw MJ, Briddon PR. Marker-method calculations for electrical levels using Gaussian-orbital basis sets. Topics in Applied Physics 2006, 104, 69-94.
- Wardle MG, Goss JP, Briddon PR. First-principles study of the diffusion of hydrogen in ZnO. Physical Review Letters 2006, 96(20), 205504.
- Goss JP, Briddon PR, Eyre RJ. Donor levels for selected n-type dopants in diamond: A computational study of the effect of supercell size. Physical Review B 2006, 74(24), 245217.
- Goss JP, Briddon PR, Rayson MJ, Sque SJ, Jones R. Vacancy-impurity complexes and limitations for implantation doping of diamond. Physical Review B - Condensed Matter and Materials Physics 2005, 72(3), 1-11.
- Goss JP, Briddon PR, Rayson MJ, Sque SJ, Jones R. Vacancy-impurity complexes and limitations for implantation doping of diamond. Physical Review B 2005, 72(3), -.
- Goss JP, Briddon PR. Theory of Mn-Ga-H and other acceptor-H complexes in GaAs. Physical Review B 2005, 72(11), 115211.
- Goss JP, Briddon PR. Theory of MnGa-H and other acceptor-H complexes in GaAs. Physical Review B 2005, 72(11), 115211.
- Wardle MG, Goss JP, Briddon PR. Theory of Li in ZnO: A limitation for Li-based p-type doping. Physical Review B 2005, 71(15), 155205.
- Wardle MG, Goss JP, Briddon PR. Theory of Li in ZnO: A limitation for Li-based p-type doping. Physical Review B 2005, 71(15), 155205.
- Eyre RJ, Goss JP, Briddon PR, Hagon JP. Theory of Jahn-Teller distortions of the P donor in diamond. Journal of Physics Condensed Matter 2005, 17(37), 5831-5837.
- Wardle MG, Goss JP, Briddon PR. Theory of Fe, Co, Ni, Cu, and their complexes with hydrogen in ZnO. Physical Review B 2005, 72(15), 155108.
- Wardle MG, Goss JP, Briddon PR, Jones R. Structural and electronic properties of thin fluorite-structure NiSi 2, CoSi2 and FeSi2 interfaces and precipitates in Si. Physica Status Solidi (A) Applications and Materials 2005, 202(5), 883-888.
- Fretwurst E, et al. Recent advancements in the development of radiation hard semiconductor detectors for S-LHC. Nuclear Instruments & Methods in Physics Research Section a-Accelerators Spectrometers Detectors and Associated Equipment 2005, 552(1-2), 7-19.
- Bruzzi M, et al. Radiation-hard semiconductor detectors for SuperLHC. Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment 2005, 541(1-2), 189-201.
- Shaw MJ, Briddon PR, Goss JP, Rayson MJ, Kerridge A, Harker AH, Stoneham AM. Importance of quantum tunneling in vacancy-hydrogen complexes in diamond. Physical Review Letters 2005, 95(10), 105502.
- Sque SJ, Jones R, Goss JP, Briddon PR, Oberg S. First-principles study of C60 and C60F36 as transfer dopants for p-type diamond. Journal of Physics: Condensed Matter 2005, 17(2), L21-L26.
- Shaw MJ, Briddon PR, Goss JP, Rayson MJ, Kerridge A, Harker AH, Stoneham AM. Erratum: Importance of Quantum Tunneling in Vacancy-Hydrogen Complexes in Diamond. Physical Review Letters 2005, 95(21), 219901.
- Fujita N, Jones R, Goss JP, Briddon PR, Frauenheim T, Oberg S. Diffusion of nitrogen in silicon. Applied Physics Letters 2005, 87(2), 021902.
- De Souza MM, Goss J. DFT analysis of the indium-antimony-vacancy cluster in silicon. Defects and Diffusion Forum 2005, 245-246, 29–38.
- Desouza MM, Goss J. DFT analysis of the indium-antimony-vacancy cluster in silicon. Diffusion and Defect Data. Pt A Defect and Diffusion Forum 2005, 245-246, 29-38.
- Moll M, et al. Development of radiation tolerant semiconductor detectors for the Super-LHC. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 2005, 546(1-2), 99-107.
- Goss JP, Briddon PR, Jones R, Oberg S. The lattice location of Ni in diamond: A theoretical study. Journal of Physics Condensed Matter 2004, 16(25), 4567-4578.
- Jones R, Hahn I, Goss JP, Briddon PR, Oberg S. Structure and Electronic Properties of Nitrogen Defects in Silicon. Diffusion and Defect Data Pt.B: Solid State Phenomena 2004, 95-96, 93-98.
- Sque SJ, Jones R, Goss JP, Briddon PR. Shallow Donors in Diamond: Chalcogens, Pnictogens, and their Hydrogen Complexes. Physical Review Letters 2004, 92(1), 174021-174024.
- Goss JP, Briddon PR, Papagiannidis S, Jones R. Interstitial nitrogen and its complexes in diamond. Physical Review B 2004, 70(23), 235208.
- Goss JP, Briddon PR, Papagiannidis S, Jones R. Interstitial nitrogen and its complexes in diamond. Physical Review B 2004, 70(23), 235208.
- Goss JP, Briddon PR, Ebertein TAG, Jones R, Pinho N, Blumenau AT, Oberg S. Electrical and optical properties of rod-like defects in silicon. Applied Physics Letters 2004, 85(20), 4633-4635.
- Goss JP, Briddon PR, Jones R, Sque S. Donor and acceptor states in diamond. Diamond and Related Materials 2004, 13(4-8), 684-690.
- Goss JP, Briddon PR, Jones R. Calculated properties of a {113} planar vacancy aggregate in Si. Journal of Physics Condensed Matter 2004, 16(20), 3311-3318.
- Goss JP, Briddon PR, Sque SJ, Jones R. Boron-hydrogen complexes in diamond. Physical Review B - Condensed Matter and Materials Physics 2004, 69(16), 165215-8.
- Goss JP, Briddon PR, Sque SJ, Jones R. Boron-hydrogen complexes in diamond. Physical Review B 2004, 69, 165215.
- Leigh RS, Sangster MJL, Newman RC, Goss JP, Jones R, Torres VJB, Oberg S, Briddon PR. Vibrational modes of sulfur defects in GaP. Physical Review B: Condensed Matter and Materials Physics 2003, 68(3), 333041-333044.
- Leigh RS, Sangster MJL, Newman RC, Goss JP, Jones R, Torres VJB, Oberg S, Briddon PR. Vibrational modes of sulfur defects in GaP. Physical Review B 2003, 68(3), -.
- Goss JP, Hahn I, Jones R, Briddon PR, Oberg S. Vibrational modes and electronic properties of nitrogen defects in silicon. Physical Review B 2003, 67(4), 045206.
- Goss JP, Hahn I, Jones R, Briddon PR, Oberg S. Vibrational modes and electronic properties of nitrogen defects in silicon. Physical Review B: Condensed Matter and Materials Physics 2003, 67(4), 452061-4520611.
- Goss JP, Briddon PR, Jones R, Sque S. The vacancy-nitrogen-hydrogen complex in diamond: A potential deep centre in chemical vapour deposited material. Journal of Physics: Condensed Matter 2003, 15(39), S2903-S2911.
- Zoellner RW, Latham CD, Goss JP, Golden WG, Jones R, Briddon PR. The structures and properties of tetrafluoromethane, hexafluoroethane, and octafluoropropane using the AIMPRO density functional program. Journal of Fluorine Chemistry 2003, 121(2), 193-199.
- Adey J, Jones R, Briddon PR, Goss JP. Optical and electrical activity of boron interstitial defects in Si. Journal of Physics Condensed Matter 2003, 15(39), S2851-S2858.
- Adey J, Goss JP, Jones R, Briddon PR. Interstitial boron defects in Si. Physica B: Condensed Matter 2003, 340-342, 505-508.
- Adey J, Goss JP, Jones R, Briddon PR. Identification of boron clusters and boron-interstitial clusters in silicon. Physical Review B 2003, 67(24), 245325.
- Adey J, Goss JP, Jones R, Briddon PR. Identification of boron clusters and boron-interstitial clusters in silicon. Physical Review B 2003, 67(24), -.
- Estreicher SK, West D, Goss J, Knack S, Weber J. First-principles calculations of pseudolocal vibrational modes: The case of Cu and Cu pairs in Si. Physical Review Letters 2003, 90(3), 035504.
- Goss JP, Coomer BJ, Jones R, Fall CJ, Briddon PR, Oberg S. Extended defects in diamond: The interstitial platelet. Physical Review B 2003, 67(16), 165208.
- Goss JP, Coomer BJ, Jones R, Fall CJ, Briddon PR, Oberg S. Extended defects in diamond: The interstitial platelet. Physical Review B 2003, 67(16), 165208.
- Goss JP, Briddon PR, Jones R, Teukam Z, Ballutaud D, Jomard F, Chevallier J, Bernard M, Deneuville A. Deep hydrogen traps in heavily B-doped diamond. Physical Review B 2003, 68(23), 235209.
- Goss JP, Briddon PR, Jones R, Teukam Z, Ballutaud D, Jomard F, Chevallier J, Bernard M, Deneuville A. Deep hydrogen traps in heavily B-doped diamond. Physical Review B 2003, 68(23), 235209.
- Goss JP, Jones R, Heggie MI, Ewels CP, Briddon PR, Oberg S. Theory of hydrogen in diamond. Physical Review B: Condensed Matter and Materials Physics 2002, 65(11), 115207.
- Goss JP, Jones R, Heggie MI, Ewels CP, Briddon PR, Oberg S. Theory of hydrogen in diamond. Physical Review B 2002, 65(11), 115207.
- Goss JP, Jones R, Briddon PR. Stress tensors and dilatation of interstitial defects in diamond. Physical Review B 2002, 65(3), -.
- Jones R, Eberlein TAG, Pinho N, Coomer BJ, Goss JP, Briddon PR, Oberg S. Self-interstitial clusters in silicon. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 2002, 186(1-4), 10-18.
- Goss JP, Eberlein TAG, Jones R, Pinho N, Blumenau AT, Frauenheim T, Briddon PR, Oberg S. Planar interstitial aggregates in Si. Journal of Physics Condensed Matter 2002, 14(48), 12843-12853.
- Heggie MI, Ewels CP, Martsinovich N, Scarle S, Jones R, Goss JP, Hourahine B, Briddon PR. Glide dislocations in diamond: First-principles calculations of similarities with and differences from silicon and the effects of hydrogen. Journal of Physics: Condensed Matter 2002, 14(48), 12689-12696.
- Goss JP, Jones R, Briddon PR. Volume expansion and stress tensors for self-interstitial aggregates in diamond. Physica B: Condensed Matter 2001, 308-310, 604-607.
- Eberlein TAG, Pinho N, Jones R, Coomer BJ, Goss JP, Briddon PR, Oberg S. Self-interstitial clusters in silicon. Physica B: Condensed Matter 2001, 308-310, 454-457.
- Goss JP, Coomer BJ, Jones R, Shaw TD, Briddon PR, Rayson MJ. Self-interstitial aggregation in diamond. Physical Review B 2001, 63(19), 195208.
- Goss JP, Hourahine B, Jones R, Heggie MI, Briddon PR. p-type surface doping of diamond: A first-principles study. Journal of Physics Condensed Matter 2001, 13(40), 8973-8978.
- Fall CJ, Goss JPG, Jones R, Briddon PR, Blumenau AT, Frauenheim T. Modelling electron energy-loss spectra of dislocations in silicon and diamond. Physica B: Condensed Matter 2001, 308-310, 577-580.
- Goss JP, Coomer BJ, Jones R, Shaw TD, Briddon PR, Oberg S. Interstitial aggregates in diamond. Diamond and Related Materials 2001, 10(3-7), 434-438.
- Coomer BJ, Goss JP, Jones R, Oberg S, Briddon PR. Identification of the tetra-interstitial in silicon. Journal of Physics Condensed Matter 2001, 13(1), L1-L7.
- Goss JP, Jones R, Shaw TD, Rayson MJ, Briddon PR. First Principles Study of the Self-Interstitial Defect in Diamond. Physica Status Solidi (A) 2001, 186(2), 215-220.
- Goss JP, Jones R, Heggie MI, Ewels CP, Briddon PR, Oberg S. First Principles Studies of H in Diamond. Physica Status Solidi (A) Applied Research 2001, 186(2), 263-268.
- Lavrov EV, Fanciulli M, Kaukonen M, Jones R, Briddon PR. Carbon-tin defects in silicon. Physical Review B - Condensed Matter and Materials Physics 2001, 64(12), 125212 - 125212-5.
- Jones R, Coomer BJ, Goss JP, Hourahine B, Resende A. The interaction of hydrogen with deep level defects in silicon. Solid State Phenomena 2000, 71(2), 173-248.
- Goss JP, Coomer BJ, Jones R, Fall CJ, Latham CD, Briddon PR, Oberg S. Small aggregates of interstitials and models for platelets in diamond. Journal of Physics Condensed Matter 2000, 12(49), 10257-10261.
- Jones R, Coomer BJ, Goss JP, Oberg S, Briddon PR. Intrinsic defects and the D1 to D4 optical bands detected in plastically deformed Si. Physica Status Solidi (B) Basic Research 2000, 222(1), 133-140.
- Zorat R, Goss J, Boilson D, Vender D. Global model of a radio-frequency H2 plasma in DENISE. Plasma Sources Science & Technology 2000, 9(2), 161-168.
- Coomer BJ, Resende A, Goss JP, Jones R, Oberg S, Briddon PR. The divacancy in silicon and diamond. Physica B: Condensed Matter 1999, 273-274, 520-523.
- Hourahine B, Jones R, Oberg S, Briddon PR. Self-interstitial-hydrogen complexes in silicon. Physical Review B - Condensed Matter and Materials Physics 1999, 59(24), 15729-15732.
- Hourahine B, Jones R, Oberg S, Briddon PR. Molecular hydrogen traps within silicon. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 1999, 58(1), 24-25.
- Deegan CM, Goss JP, Vender D, Hopkins MB. Measurement of the electron energy distribution function in an argon radio-frequency discharge in the gamma mode. Applied Physics Letters 1999, 74(14), 1969-1971.
- Coomer BJ, Goss JP, Jones R, Oberg S, Briddon PR. Interstitial aggregates and a new model for the I1/W optical centre in silicon. Physica B: Condensed Matter 1999, 273-274, 505-508.
- C. G. Van de Walle and J. P. Goss. Energetics and vibrational frequencies of interstitial H2 molecules in semiconductors. Materials Science and Engineering B-Solid State Materials for Advanced Technology 1999, 58(1-2), 17-23.
- R. Zorat, J.P. Goss, and D. Vender. Zero-Dimensional Model of a Low Pressure H2 Discharge. Euro. Phys. Abs 1998, 22, 350.
- C.M. Deegan, J.P. Goss, D. Vender, and M.B. Hopkins. Investigation of the spatial structure of a capacitive radio-frequency discharge. Euro. Phys. Abs 1998, 22, 202.
- M. Budde, B. Bech Nielsen, P. Leary, J. Goss, R. Jones, P. R. Briddon, S. Öberg and S. J. Breuer. Identification of the hydrogen-saturated self-interstitials in silicon and germanium. Physical Review B 1998, 57(8), 4397-4412.
- J.P. Goss, G. Cunge, B. Crowley, D. Vender, and M.M. Turner. Comparison Between Fluid Simulations and Experimentally Measured Profiles for an Inductive Ar Discharge in a Cylindrical Geometry. Euro. Phys. Abs 1998, 22, 220.
- R. Jones, J. P. Goss, P. R. Briddon and S. Öberg. N2 and N4 optical transitions in diamond: A breakdown of the vacancy model. Physical Review B 1997, 56(4), R1654-R1656.
- J. P. Goss, R. Jones, P. R. Briddon, G. Davies, A. T. Collins, A. Mainwood, J. A. van Wyk, J. M. Baker, M. E. Newton, A. M. Stoneham and S. C. Lawson. Comment on "Electronic structure of the N-V center in diamond: Theory". Physical Review B 1997, 56(24), 16031-16032.
- J. P. Goss, R. Jones, S. Öberg and P. R. Briddon. (CAs)2-hydrogen defects in GaAs: A first-principles study. Physical Review B 1997, 55(23), 15576-15580.
- Goss JP, Jones R, Breuer SJ, Briddon PR, Oberg S. The twelve-line 1.682 eV luminescence center in diamond and the vacancy-silicon complex. Physical Review Letters 1996, 77(14), 3041-3044.
- F. Berg Rasmussen, S. Öberg, R. Jones, C. Ewels, J. Goss, J. Miro and P. Deák. The nitrogen-pair oxygen defect in silicon. Materials Science and Engineering B-Solid State Materials for Advanced Technology 1996, 36(1-3), 91-95.
- M. Budde, B. Bech Nielsen, R. Jones, J. Goss, S. Öberg. Local modes of the H2 dimer in germanium. Physical Review B 1996, 54(8), 5485-5494.
- R. Jones, J. E. Lowther and J. Goss. Limitations to n-type doping in diamond: The phosphorus-vacancy complex. Applied Physics Letters 1996, 69(17), 2489-2491.
- R. Jones, S. Öberg, J. Goss, P. R. Briddon and A. Resende. Theory of Nickel and Nickel-Hydrogen Complexes in Silicon. Physical Review Letters 1995, 75(14), 2734-2737.
- R. Rahbi, B. Pajot, C. P. Ewels, S. Öberg, J. Goss, R. Jones, Y. Nissim, B. Theys and C. Blaauw. The Hydrogen Complexes in Gallium-Arsenide and Indium-Phosphide Doped with Magnesium. Solid State Communications 1995, 93(5), 462-462.
- C. P. Ewels, S. Öberg, P. R. Briddon, J. Goss, R. Jones, S. J. Breuer, R. Darwich and B. Pajot. Hydrogen Passivated Defects in InP. Solid State Communications 1995, 93(5), 459-460.
- R. Jones, C. Ewels, J. Goss, J. Miro, P. Deák, S. Öberg, F. Berg Rasmussen. Theoretical and isotopic infrared-absorption investigations of nitrogen-oxygen defects in silicon. Semicond. Sci. Technol 1994, 9, 2145-2148.
- R. Jones, J. Goss, C. Ewels and S. Öberg. Ab-Initio Calculations of Anharmonicity of the C-H Stretch Mode in HCN and GaAs. Physical Review B 1994, 50(12), 8378-8388.
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Book Chapters
- Goss JP, Eyre RJ, Briddon PR. Theoretical models for doping diamond for semiconductor applications. In: Koizumi S; Nebel CE; Nesladek M, ed. Physics and applications of CVD diamond. Weinheim: Wiley-VCH, 2008, pp.199-236.
- Jones R, Goss JP. Data Review: Theory of aggregation of nitrogen in diamond. In: Nazare, M.H., Neves, A.J, ed. Properties, Growth and applications of Diamond. London: INSPEC, IEEE, 2001, pp.Part A, A5.1.
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Conference Proceedings (inc. Abstracts)
- Russo Abegão F, Venn-Wycherley M, Vasilchenko A, Dyson M, O'Malley C, Law R, Adamson H, Joyce S, Norman R, Goss J, Devlin M. Teaching Students How to Code Using Physical Computing Tools. In: ChemEngDay 2019. 2019, Edinburgh, UK.
- Al-hadidi M, Goss JP, Al-hamadany R, Briddon PR, Rayson MJ. Ab initio calculations of carbon impurities in ferroelectric lead titanate. In: International Conference for Students on Applied Engineering (ICSAE). 2017, Newcastle, UK: IEEE.
- Al-Hadidi MS, Goss JP, Briddon PR, Al-Hamadany RA, Ahmed ME, Rayson MJ. Density functional simulation of carbon at the titanium site in perovskite barium titanate. In: 12TH EUROPHYSICAL 12th Europhysical Conference on Defects in Insulating Materials (EURODIM 2014). 2015, Canterbury, UK: IOP Publishing.
- Escobedo-Cousin E, Vassilevski K, Hopf T, Wright N, O'Neill A, Horsfall A, Goss J. Solid phase growth of graphene on silicon carbide by nickel silicidation: graphene formation mechanisms. In: International Conference on Silicon Carbide and Related Materials 2013. 2014, Miyazaki, Japan: Scientific.Net.
- Hopf T, Vassilevski K, Escobedo-Cousin E, Wright N, O'Neill A, Horsfall A, Goss J, Barlow A, Wells G, Hunt M. Optimizing the vacuum growth of epitaxial graphene on 6H-SiC. In: 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013). 2014, Miyazaki, Japan: Scientific.Net / Trans Tech Publications Inc.
- Martin LC, Chan HK, Clark D, Ramsay EP, Murphy AE, Smith DA, Thompson RF, Young RAR, Goss JP, Wright NG, Horsfall AB. Low Frequency Noise Analysis of Monolithically Fabricated 4H-SiC CMOS Field Effect Transistors. In: 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013). 2014, Miyazaki, JAPAN: Scientific.Net.
- Martin LC, Chan HK, Clark D, Ramsay EP, Murphy AE, Smith DA, Thompson RF, Young RAR, Goss JP, Wright NG, Horsfall AB. Low Frequency Noise Analysis of Monolithically Fabricated 4H-SiC CMOS Field Effect Transistors. In: International Conference on Silicon Carbide and Related Materials 2013. 2014, Miyazaki, Japan: Trans Tech Publications Inc.
- Ponon NK, Appleby DJR, Arac E, Kwa KSK, Goss JP, Hannemann U, Petrov PK, Alford NM, O'Neill A. Impact of Crystalline Orientation on the Switching Field in Barium Titanate Using Piezoresponse Force Spectroscopy. In: MRS Fall Meeting and Exhibit. 2014, Boston, MA, USA: Cambridge University Press.
- Tiwari AK, Goss JP, Briddon PR, Wright NG, Horsfall AB, Rayson MJ. Ultra thin transition metal oxide coatings on diamond for thermionic applications. In: MRS Fall Meeting & Exhibit. 2013, Boston, Massachusetts: Cambridge University Press.
- Tiwari AK, Goss JP, Briddon PR, Wright NG, Horsfall AB, Rayson MJ. Transition metal oxide-diamond interfaces for electron emission applications. In: 9th European Conference on Silicon Carbide and Related Materials. 2013, St. Petersburg, Russian Federation: Trans Tech Publications, Inc.
- Chan HK, Stevens RC, Goss JP, Wright NG, Horsfall AB. Reliability evaluation of 4H-SiC JFETs using I-V characteristics and Low Frequency Noise. In: 9th European Conference on Silicon Carbide and Related Materials. 2013, St. Petersburg, Russian Federation: Trans Tech Publications, Inc.
- Tiwari AK, Goss JP, Wright NG, Horsfall AB. Nano scale vacuum gap thermo-tunnel device of energy harvesting applications. In: MRS Fall Meeting & Exhibit. 2013, Boston, Massachusetts: Cambridge University Press.
- Nagareddy VK, Hernandez SC, Wheeler VD, Nyakiti LO, Myers-Ward RL, Eddy CR, Goss JP, Wright NG, Walton SG, Gaskill DK, Horsfall AB. High Temperature Stability of Oxygen Functionalized Epitaxial Graphene/Metal Contact Interfaces. In: 9th European Conference on Silicon Carbide and Related Materials. 2013, St. Petersburg, Russian Federation: Trans Tech Publications, Inc.
- AL-Hadidi MS, Goss JP, Briddon PR, Al-Hamadany RA, Ahmed ME. Carbon at the Ti site in strontium titanate from first principles. In: DIELECTRICS 2013. 2013, DIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLAND: IOP PUBLISHING LTD.
- Nagareddy VK, Gaskill DK, Tedesco JL, Myers-Ward RL, Eddy CR, Goss JP, Wright NG, Horsfall AB. Temperature Dependent Chemical Sensitivity of Epitaxial Graphene. In: 14th International Conference on Silicon Carbide and Related Materials (ICSCRM). 2012, Cleveland, Ohio, USA: Trans Tech Publications Ltd.
- Nagareddy VK, Goss JP, Wright NG, Horsfall AB, Hernandez SC, Wheeler VD, Nyakiti LO, Myers-Ward RL, Eddy CR, Walton SG, Gaskill DK. Oxygen Functionalised Epitaxial Graphene Sensors for Enhanced Polar Organic Chemical Vapour Detection. In: 2012 IEEE SENSORS PROCEEDINGS. 2012, 345 E 47TH ST, NEW YORK, NY 10017 USA: IEEE.
- Chan HK, Stevens RC, Goss JP, Wright NG, Horsfall AB. Low Frequency Noise in 4H-SiC Lateral JFET Structures. In: 14th International Conference on Silicon Carbide and Related Materials (ICSCRM). 2012, Cleveland, Ohio, USA: Trans Tech Publications Ltd.
- Escobedo-Cousin E, Vassilevski K, Nikitina I, Wright N, O'Neill A, Horsfall A, Goss J. Local Solid Phase Epitaxy of Few-Layer Graphene on Silicon Carbide. In: 14th International Conference on Silicon Carbide and Related Materials (ICSCRM). 2012, Cleveland, Ohio, USA: Trans Tech Publications Ltd.
- Spargo CM, Furnival BJD, Mahapatra RM, Goss JP, Wright NG, Horsfall AB. Identification of Slow States at the SiO2/SiC Interface Through Sub-Bandgap Illumination. In: 14th International Conference on Silicon Carbide and Related Materials (ICSCRM). 2012, Cleveland, Ohio, USA: Trans Tech Publications Ltd.
- Tiwari AK, Goss JP, Briddon P, Wright NG, Horsfall AB. Density functional simulations of transition metal terminated (001)-diamond surfaces. In: 14th International Conference on Silicon Carbide and Related Materials (ICSCRM). 2012, Cleveland, Ohio, USA: Trans Tech Publications Ltd.
- Goss JP, Briddon PR, Nagareddy VK, Wright NG, Horsfall AB, Caldwell JD, Gaskill DK, Jernigan GG. Influence of intercalated silicon on the transport properties of graphene. In: Materials Science Forum: 8th European Conference on Silicon Carbide and Related Materials. 2011, Oslo, Norway: Trans Tech Publications Ltd.
- Ahmed M, Goss J, Eyre R, Briddon P, Taylforth M. Theoretical investigation on optical characteristics of functionalization silicon quantum dots. In: Nanotechnology: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - Technical Proceedings of the 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech. 2010, Anaheim, California, USA: CRC Press.
- Ahmed ME, Goss JP, Eyre RJ, Briddon PR, Taylforth MA. Theoretical investigation on optical characteristics of functionalised silicon quantum dots. In: Nanotech. 2010, Anaheim, California, USA: NSTI.
- Goss J, Briddon P, Wright N, Horsfall A. Density functional simulations of physisorbed and chemisorbed single graphene layers on 4H-SiC (0001), (0001̄) and 4H-SiC:H surface. In: Materials Science Forum: Silicon Carbide and Related Materials 2009. 2010, Nürnberg, Germany: Trans Tech Publications Ltd.
- Goss JP, Briddon PR, Wright NG, Horsfall AB. Density Functional Simulations of Physisorbed and Chemisorbed Single Graphene Layers on 4H-SiC (0001), (000(1)over-bar) and 4H-SiC:H surface. In: 13th International Conference on Silicon Carbide and Related Materials (ICSCRM 2009). 2010, Nurnberg, Germany: Materials Science Forum: Trans Tech Publications Ltd.
- Ahmed ME, Goss JP, Eyre RJ, Briddon PR, Taylforth MA. Ab Initio Study of functionalized 1 nm Silicon Nanoparticles. In: Journal of Physics: Conference Series. 2010, Nottingham, UK: IOP Publishing Ltd.
- Ahmed ME, Goss JP, Eyre RJ, Briddon PR, Taylforth MA. Ab Initio study of functionalized 1 nm silicon nanoparticles. In: Journal of Physics: Conference Series, Quantum Dot. 2010, Notthingham, UK: Institute of Physics Publishing Ltd.
- Carvalho A, Coutinho J, Jones R, Barroso M, Goss JP, Briddon PR. Density-functional theory study of interstitial iron and its complexes with B and Al in dilute SiGe alloys. In: E-MRS 2008 Spring Conference Symposium J: Beyond Silicon Technology: Materials and Devices for Post-Si CMOS. 2008, Strasbourg, France: Materials Science in Semiconductor Processing: Pergamon.
- Goss JP, Eyre RJ, Briddon PR. Transfer doping of diamond via 2,3-dichloro-5,6-dicyano-1,4-benzoquinone (DDQ). In: Physica Status Solidi A: Applications and Materials Science. International Hasselt Diamond Workshop. 2007, Diepenbeek-Hasselt, Belgium: Wiley - V C H Verlag GmbH & Co. KGaA.
- Goss JP, Eyre RJ, Briddon PR. A theoretical study of Li as n-type dopants for diamond: The role of aggregation. In: 12th Hasselt Diamond Workshop 2007 (SBDD XII). 2007, Hasselt University, Diepenbeek-Hasselt, Belgium: Physica Status Solidi (A) Applications and Materials, Wiley-Blackwell.
- Wardle MG, Goss JP, Briddon PR. Transition-metal and hydrogen in ZnO: A source of shallow donors. In: 23rd International Conference on Defects in Semiconductors. 2006, Awaji Isl, Japan: Physica B: Condensed Matter, Elsevier BV.
- Goss JP, Briddon PR, Wardle MG. Theory of Mn-H co-doping for GaAs and related magnetic semiconductors. In: 23rd International Conference on Defects in Semiconductors. 2006, Awaji Isl, Japan: Physica B: Condensed Matter, Elsevier.
- Fujita N, Jones R, Goss JP, Frauenheim T, Oberg S, Briddon PR. Theoretical investigations of the diffusion of Nitrogen-pair defects in Silicon. In: Diffusion and Defect Data Pt.B: Solid State Phenomena. 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy. 2005, Giens, France: Scitec Publications Ltd.
- Fujita N, Jones R, Goss JP, Frauenheim T, Oberg S, Briddon PR. Theoretical investigations of the diffusion of nitrogen-pair defects in silicon. In: Gettering and Defect Engineering in Semiconductor Technology XI. 2005, Giens, France: Uetikon-Zuerich.
- Goss JP, Briddon PR, Sachdeva R, Jones R, Sque SJ. Quantum mechanical modeling of the structure and doping properties of defects in diamond. In: Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors. 2005, Flagstaff, Arizona: AIP.
- Goss JP, Briddon PR, Sachdeva R, Jones R, Sque SJ. Quantum mechanical modeling of the structure and doping properties of defects in diamond. In: 27th International Conference on the Physics of Semiconductors (ICPS). 2005, Flagstaff, Arizona, USA: American Institute of Physics.
- Jones R, Hahn I, Goss JP, Briddon PR, Oberg S. Structure and electronic properties of nitrogen defects in silicon. In: Gettering and Defect Engineering in Semiconductor Technology (Gadest) Proceedings of the 10th International Autumn Meeting. 2004, Berlin, Germany: Scitec Publications Ltd.
- Goss JP, Briddon PR, Sachdeva R, Jones R, Sque SJ. Quantum Mechanical Modeling of the Structure and Doping Properties of Defects in Diamond. In: 27th International Conference on the Physics of Semiconductors. 2004, Flagstaff, Arizona, USA: AIP.
- Sque SJ, Jones R, Goss JP, Briddon PR. Shallow donors in diamond: Pnictogen and chalcogen hydrogen defects. In: 22nd International Conference on Defects in Semiconductors (ICDS-22). 2003, Aarhus, Denmark: Physical Review B: Condensed Matter and Materials Physics, Wiley-Blackwell.
- Rayson MJ, Goss JP, Briddon PR. First principles calculation of zero-field splitting tensors. In: Physica B: Condensed Matter. 2003, Aarhus, Denmark: Elsevier BV.
- Coomer BJ, Leary P, Budde M, Nielsen BB, Jones R, Oberg S, Briddon PR. Vacancy-hydrogen complexes in germanium. In: Symposium A on Defects in Silicon-Hydrogen at the 1998 Spring Meeting of the European Materials Research Society. 1999, Strasbourg, France: Elsevier.
- Coomer BJ, Resende A, Goss JP, Jones R, Oberg S, Briddon PR. The divacancy in silicon and diamond. In: 20th International Conference on Defects in Semiconductors (ICDS-20). 1999, Berkeley, CA: Elsevier.
- Wright NG, Johnson CM, O'Neill AG. Mechanistic model for oxidation of SiC. In: 2nd European Conference on Silicon Carbide and Related Materials (ECSCRM 98). 1999, Montpellier, France: Elsevier.
- A. Resende, J. Goss, P. R. Briddon, S. Öberg and R. Jones. Theory of gold-hydrogen complexes in silicon. In: Defects in Semiconductors - ICDS-19, Pts 1-3. 1997.
- M. Budde, B. Bech Nielsen, P. Leary, J. Goss, R. Jones, P. R. Briddon, S. Öberg and S. J. Breuer. The hydrogen-saturated self-interstitial in silicon and germanium. In: Defects in Semiconductors - ICDS-19, Pts 1-3. 1997.
- R. Bouanani-Rahbi, B. Pajot, C.P. Ewels, S. Öberg, J. Goss, R. Jones, Y. Nissim, B. Theys, C. Blaauw. Is H passivating Mg Acceptors Bond-centred in InP:Mg and Anti-bonded in GaAs:Mg?. In: Shallow Level Centers in Semiconductors. 1997, World Scientific, Singapore.
- R. Jones, J. P. Goss, P. R. Briddon and S. Öberg. Breakdown of the vacancy model for impurity-vacancy defects in diamond. In: Defects in Semiconductors - ICDS-19, Pts 1-3. 1997.
- J. P. Goss, R. Jones, S. J. Breuer, P. R. Briddon and S. Öberg. A first principles study of interstitial Si in diamond. In: Defects in Semiconductors - ICDS-19, Pts 1-3. 1997.
- F. Berg Rasmussen, S. Öberg, R. Jones, C. Ewels, J. Goss, J. Miro, and P. Deák. The nitrogen-pair oxygen defect in silicon. In: Early Stages of Oxygen Precipitation in Silicon. 1996, Exeter, UK: Kluwers Academic Press.
- J.P. Goss, R. Jones, S.J. Breuer, P.R. Briddon, and S. Öberg. First principles theory of impurity-vacancy complexes in diamond. In: 23rd International Conference on the Physics of Semiconductors. 1996, Berlin: World Scientific.
- R. Jones, J. Goss, S. Öberg, P. R. Briddon and A. Resende. Theory of the NiH2 complex in Si and the CuH2 complex in GaAs. In: ICDS-18 - Proceedings of the 18th International Conference on Defects in Semiconductors, Pts 1-4. 1995.
- F. Berg Rasmussen, S. Öberg, R. Jones, C. Ewels, J. Goss, J. Miro and P. Deák. The NNO defect in silicon. In: ICDS-18 - Proceedings of the 18th International Conference on Defects in Semiconductors, Pts 1-4. 1995.
- M. Budde, B. Bech Nielsen, R. Jones, S. Öberg and J. Goss. The H2* defect in crystalline germanium. In: ICDS-18 - Proceedings of the 18th International Conference on Defects in Semiconductors, Pts 1-4. 1995.
- J. Goss, A. Resende, R. Jones, S. Öberg and P. R. Briddon. Ni complexes in diamond. In: ICDS-18 - Proceedings of the 18th International Conference on Defects in Semiconductors, Pts 1-4. 1995.
- B. Bech Nielsen, L. Hoffmann, M. Budde, R. Jones, J. Goss and S. Öberg. H interacting with intrinsic defects in Si. In: ICDS-18 - Proceedings of the 18th International Conference on Defects in Semiconductors, Pts 1-4. 1995.
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Note
- Jones R, Heggie MI, Goss JP, Miranda CR, Antonelli A, Nunes RW. Comment on "a/[110] stacking fault model for platelets in diamond". Physical Review Letters 2005, 95(13), 1-.
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Review
- Goss JP. Theory of hydrogen in diamond. Journal of Physics Condensed Matter 2003, 15(17), R551-R580.
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Thesis
- J.P. Goss. A First Principles Study of Defects in Semiconductors. Ph.D. thesis, University of Exeter, 1997.