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Staff Profile

Dr Konstantin Vasilevskiy

Senior Research Associate

Background

Introduction

Dr Konstantin Vasilevskiy (Vassilevski) joined Newcastle University in February 2001. He is a member of the Emerging Technology and Materials Group


Background


Dr Vasilevskiy has a strong background in experimental and theoretical physics. He has in-depth understanding of physics and operation of semiconductor devices proven by numerous publications. His work included numerical simulation of device operation, epi-structure and device layout design, development of device process flow, definition of process control test structures, fabrication and characterisation of various semiconductor devices.

Dr Vasilevskiy displays a rigorous device fabrication technique backed up by many years of hands-on experience in all basic wafer processing procedures including atomic layer deposition of high-k dielectrics; oxidation; diffusion; wet and dry etching; contact lithography; thin film deposition by magnetron sputtering, e-beam and thermal evaporation; rapid thermal processing. Dr Vasilevskiy gained deep understanding of specific device processing flow design defined by unique properties of WBG materials.

Dr Vasilevskiy has extensive experience in use and data analysis of material characterisation methods including XRD, XPS, AES, SIMS, Raman spectroscopy, AFM, SEM and Hall measurements. He has strong background and experience in electrical characterisation of semiconductor devices.

Dr Vasilevskiy has an extensive track record of concept development and realization of innovative device designs and process solutions which includes   

- design and fabrication of a SiC integrated single stage differential amplifier operating at temperatures up to 400 °C;

-  fabrication of top-gated graphene transistors and their characterisation at elevated temperatures;

-  development of SiC Schottky diodes with blocking voltages up to 6 kV;

-  development of SiC transistors operating at temperatures up to 500 °C;

-  development of high power SiC p-i-n diode for microwave application;

-  development of SiC Schottky diode with highest on/off current ratio;

-  demonstration of microwave oscillations generated by SiC IMPATT diode for the first time;

-  development of high voltage silicon carbide Zener diode;

-  development of low resistivity ohmic contact to 4H-SiC with p type conductivity;

-  experimental estimation of the electron saturated drift velocity in 4H-SiC;

-  demonstration of 6H-SiC pulsed diodes operating at high avalanche current density;

-  development of LEDs based on GaN p-n structures grown by hydride vapour phase epitaxy;

-  development and sustaining a small scale commercial production of pulsed Si IMPATTs operating at 140 GHz.

    Dr Vasilevskiy wrote one book chapter and co-edited two books. He has published 110 papers in refereed journals (38) and conference proceedings (72). Dr Vasilevskiy is a co-inventor of 16 patents (UK, USA, Japan and Canadian) granted in the field of WBG semiconductors (6 patents in SiC device processing and 10 - in III-V nitrides).

    Roles and Responsibilities

    Konstantin Vassilevski is main responsible for the operation, maintenance and development of all SiC specific process tools and processes within the EECE clean room.

    Qualifications

    Ph.D. in Physics of Semiconductors from A. F. Ioffe Physico-Technical Institute, Russian Academy of Science, 2002. Thesis: Silicon carbide IMPATT diode.

    M.Sc. in Solid State Physics from Moscow Engineering Physics Institute, 1981. Thesis: High power pulsed photo-dissociation laser.

    Research

    Research Interests

    Mentor: Prof. A.G.O'Neill

    Dr Vasilevskiy has participated in 17 research projects funded by EU, UK and USA. He acted as a Principal Investigator in four of them and as a research Co-Investigator in 2 projects.

    Esteem Indicators

    Member of technical and local organizing committee for the 11th European Conference on Silicon Carbide and Related Materials, Greece, 2016.

    Member of the local organizing committee for the 6th European Conference on Silicon Carbide and Related Materials (ECSCRM 2006).

    Invited paper "Silicon carbide diodes for microwave applications" in a special issue of International Journal of High Speed Electronics and Systems, 2005 (also re-published as a hard cover book entitled “SiC Materials and Devices”).

    Invited oral presentation at International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan: 4H-SiC IMPATT Diode Fabrication and Testing.

    Member of the organizing committee of the First European GaN Workshop held in the Swiss Alp village of Rigi-Kaltbad on June 2-4, 1996 (EGW-1).

    Patents

    1.   Semiconductor device having SiC substrate and method for manufacturing the same,
    Takeo Yamamoto, Rajesh Kumar Malhan, Yuuichi Takeuchi, Konstantin Vassilevski, Nicholas Wright,
    GB2427071B, March 9, (2011).

    2.   Method of forming an ohmic contact in wide band semiconductor,
    Rajesh Kumar Malhan, Yuuichi Takeuchi, Irina Nikitina, Konstantin Vassilevski, Nicholas Wright, Alton Horsfall,
    GB2424312B, March 3, (2010).

    3.   Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide,
    K. Zekentes, K. Vassilevski,
    Canadian Patent No CA 2322595, May 5, (2009).

    4.   Method of forming an ohmic contact in wide band semiconductor,
    Rajesh Kumar Malhan, Yuichi Takeuchi, Irina Nikitina, Konstantin Vassilevski, Nicholas Wright, Alton Horsfall,
    US Patent No 7,141,498, November 28, (2006).

    5.   Semiconductor device and its manufacturing method,
    Takeo Yamamoto, Rajesh Kumar Malhan, Yuichi Takeuchi, Nicholas Wright, Konstantin Vassilevski,
    Japan Patent JP 2006-344688, December 21 (2006)

    6.   Ohmic connection forming method of wide band semiconductor,
    Rajesh Kumar     Malhan, Yuichi Takeuchi, Irina Nikitina, Konstantin Vassilevski, Nicholas Wright, Alton Horsfall,
    Japan Patent JP 2006-261624, September 28 (2006).

    7.   III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer,
    A. Nikolaev, Y. Melnik, V. Dmitriev, K. Vassilevski,
    US Patent No 6,849,862, February 1, (2005).

    8.   Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques,
    A. Nikolaev, Y. Melnik, V. Dmitriev, K. Vassilevski,
    US Patent No 6,599,133, July 29, (2003).

    9.   Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide,
    K. Zekentes, K. Vassilievski,
    US Patent No 6,599,644, July 29, (2003).

    10. P-n heterojunction-based structures utilizing HVPE grown III-V compound layers,
    A. Nikolaev, Y. Melnik, V. Dmitriev, K. Vassilevski,
    US Patent No 6,559,467, May 6, (2003).

    11. Method for growing p-n heterojunction-based structures utilizing HVPE techniques,
    A. Nikolaev, Y. Melnik, V. Dmitriev, K. Vassilevski,
    US Patent No 6,559,038, May 6, (2003).

    12. Method for growing p-type III-V compound material utilizing HVPE techniques,
    A. Nikolaev, Y. Melnik, V. Dmitriev, K. Vassilevski,
    US Patent No 6,555,452, April 29, (2003).

    13. III-V compound semiconductor device with an AlxByInzGa1-x-y-zN non-continues quantum dot layer,
    A. Nikolaev, Y. Melnik, V. Dmitriev, K. Vassilevski,
    US Patent No. 6,479,839, November 12, (2002).

    14. P-n homojunction-based structures utilizing HVPE grown III-V compound layers
    A. Nikolaev, Y. Melnik, V. Dmitriev, K. Vassilevski,
    US Patent No. 6,476,420, November 5, (2002).

    15. Method for growing p-n homojunction-based structures utilizing HVPE techniques,
    A. Nikolaev, Y. Melnik, V. Dmitriev, K. Vassilevski,
    US Patent No 6,472,300, October 29, (2002).

    16. Process for producing III-V nitride pn junctions and p-i-n junctions,
    Nikolaev A.E., Melnik Y.V., Vassilevski K.V., Dmitriev V.A.,
    US patent No. 6,218,269, April 17, (2001).

    Publications