Staff Profile
Professor Patrick Briddon
Professor of Computational Physics
- Telephone: +44 (0) 191 208 7348
- Address: School of Maths, Stats and Physics,
Room 2.07 Herschel Building,
University of Newcastle
Newcastle upon Tyne
NE1 7RU
Background
I have worked in Newcastle University since 1991 in the departments of physics, chemistry, electrical engineering and am currently the Professor of Computational Physics in the School of Maths, Stats and Physics. I have an active research interest in the application of quantum mechanics to model the properties of materials, including molecules, nano structures, amorphous and crystalline solids. A particular interest is the way in which these materials are modified by the presence of defects.
I am particularly interested in the development of methods in many-electron quantum physics and the ways in which they can be specifically tailored to run on state of the art high performance computing facilities, computers which may contain 1000s of cores. I have served on numerous national committees relating to UK research infrastructure and policy in this area.
Qualifications
1987 BSc Theoretical Physics, University of Exeter, UK.
1990 PhD Theoretical Physics, University of Exeter, UK.
Memberships
Fellow of the Institute of Physics.
Responsibilities
I was the degree programme director for the degrees in physics, 2014-2016.
Research
Patrick is a member of the Emerging Technologies and Materials research group, and his research profile can be viewed on Google Scholar.
Research Interests
My work is concerned with the theoretical modelling of the properties of materials, primarily utilising principles techniques such as density functional theory. I am the author of the modelling package AIMPRO modelling program used by my group in Newcastle as well as other groups in the UK and internationally. I am highly involved in high performance computing in the UK and maintain a keen interest in the development and implementation of highly scaling numerical algorithms on massively parallel architectures.
Memberships
Fellow of the Institute of Physics.
Teaching
Undergraduate Teaching
I currently teach the following lecture courses as part of the physics degree programmes
PHY2036: Thermodynamics and Statistical Physics
PHY8035: Quantum Modelling of Molecules, Solids and Nanostructures
I have taught the following courses over the last few years:
Molecular modelling — a course taught to final year chemistry students introducing the rudiments of some of the computer modelling techniques used in chemistry.
Vibrations and Waves — a course taught to stage one students introducing the properties of vibrational motion and the propagation of waves.
Solid State Physics — a course taught to final year physics students covering crystallography, a quantum treatment of electrons in solids, phonons and the electron phonon interaction, semiconductor physics.
Computer modelling — a course that examines how some of the important differential equations of mathematical physics can be accurately and efficiently solved numerically using a computer.
Atomic Physics — a course looking at the electronic structure of atoms, including the Schroedinger treatment, fine structure, many electron effects (the Hartree method) and LS coupling.
Statistical Physics — a course taught to second year physics/natural science students introducing the fundamental principles underpinning this subject.
Quantum Mechanics — a mathematical treatment of many of the fundamental ideas of underpinning quantum theory.
Electromagnetism — a course given to stage 2 physics students introducing the formal structure of this subject up to Maxwell's equations, both in vacuo and in the presence of dielectric and magnetic materials. The solution of Maxwell's equations for electromagnetic waves in good dielectric and conductors.
Mathematical Methods — a stage two course that covered vector analysis, Fourier analysis, integral transforms and differential equations.
Publications
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Articles
- Goss JP, Lowery R, Briddon PR, Rayson MJ. Density functional theory study of Al, Ga and In impurities in diamond. Diamond and Related Materials 2024, 142, 110811.
- Beattie JMA, Goss JP, Rayson MJ, Briddon PR. Structure and electron affinity of the 4H-SiC (0001) surfaces: A methodological approach for polar systems. Journal of Physics Condensed Matter 2021, 33(16), 165003.
- Beattie JMA, Goss JP, Rayson MJ, Briddon PR. Structure and electron affinity of (1 1 2¯ 0)–X 4H–SiC surface. Applied Surface Science 2020, 518, 145986.
- Atumi MK, Goss JP, Briddon PR, Gsiea AM, Rayson MJ. Hyperfine interaction of H-divacancy in diamond. Results in Physics 2020, 16, 102860.
- Breeze BG, Meara CJ, Wu XX, Michaels CP, Gupta R, Diggle PL, Dale MW, Cann BL, Ardon T, D'haenens-Johansson UFS, Friel I, Rayson MJ, Briddon PR, Goss JP, Newton ME, Green BL. Doubly charged silicon vacancy center, Si-N complexes, and photochromism in N and Si codoped diamond. Physical Review B 2020, 101(18), 184115.
- Meara CJ, Rayson MJ, Briddon PR, Goss JP. Density functional investigation of boron incorporation in silicon-vacancy complexes. Diamond and Related Materials 2020, 109, 108016.
- Meara CJ, Rayson MJ, Briddon PR, Goss JP. A computational study of nanodiamond surface radicals and nitrogen-vacancy charge fluctuations. Journal of Physics and Chemistry of Solids 2020, 146, 109637.
- Beattie JMA, Goss JP, Rayson MJ, Briddon PR. Silicon and germanium terminated (0 0 1)-(2 x 1) diamond surface. Journal of Physics: Condensed Matter 2019, 31(39), 395001.
- Yaya A, Impellizzeri A, Massuyeau F, Duvail JL, Briddon P, Ewels CP. Mapping the stacking interaction of triphenyl vinylene oligomers with graphene and carbon nanotubes. Carbon 2019, 141, 274-282.
- Alsnani H, Goss JP, Briddon P, Rayson M, Horsfall AB. First Principles Study of the Stability and Diffusion Mechanism of a Carbon Vacancy in the Vicinity of a SiO2/4H–SiC Interface. Physica Status Solidi (A) Applications and Materials Science 2019, 216, 1900328.
- Beattie JMA, Goss JP, Rayson MJ, Briddon PR. Electron-affinity and surface-stability of aluminium-oxide terminated diamond surfaces. Diamond and Related Materials 2019, 94, 137-145.
- Meara CJ, Rayson MJ, Briddon PR, Goss JP. Density functional theory study on magnetically detecting positively charged nitrogen-vacancy center in diamond. Physical Review B 2019, 100(10), 104108.
- Oyarzun AM, Latham CD, Ljubisa R, Briddon PR, Rayson MJ. Spin density distributions on graphene clusters and ribbons with carbene-like active sites. Physical Chemistry Chemical Physics 2018, 20(42), 26968-26978.
- Ewels C, Rio J, Niwa H, Omachi H, Shinohara H, Rayson M, Briddon P. Determining addition pathways and stable isomers for CF3 functionalization of endohedral Gd@C60. Royal Society Open Science 2018, 5(9), 180588.
- Al-Ani OA, Goss JP, Al-Hadidi M, Briddon PR, Rayson MJ, Cowern NEB. Voids in silicon as a sink for interstitial iron: A density functional study. Journal of Crystal Growth 2017, 468, 101-103.
- Al-Ani OA, Goss JP, Briddon PR, Rayson MJ, Cowern NEB. Interstitial Fe-pairs in silicon. Journal of Crystal Growth 2017, 468, 54-56.
- Vuong A, Trevethan T, Latham CD, Ewels CP, Erbahar D, Briddon PR, Rayson MJ, Heggie MI. Interlayer vacancy defects in AA-stacked bilayer graphene: Density functional theory predictions. Journal of Physics Condensed Matter 2017, 29(15), 155304.
- Al-Ani OA, Goss JP, Al-Hadidi M, Briddon PR, Rayson MJ, Cowern NEB. Impact of grain boundary structures on trapping iron. Journal of Crystal Growth 2017, 468, 448-451.
- Al-Hadidi M, Goss JP, Al-Ani OA, Briddon PR, Rayson MJ. Density functional calculations of carbon substituting for Zr in barium zirconate. Journal of Crystal Growth 2017, 468, 728-731.
- Pavloudis T, Termentzidis K, Komninou P, Latham CD, Briddon PR, Kioseoglou J. The influence of structural characteristics on the electronic and thermal properties of GaN/AlN core/shell nanowires. Journal of Applied Physics 2016, 119(7), 074304.
- Rashid M, Tiwari AK, Goss JP, Rayson MJ, Briddon PR, Horsfall AB. Surface-state dependent optical properties of OH-, F-, and H-terminated 4H-SiC quantum dots. Physical Chemistry Chemical Physics 2016, 18, 21676-21685.
- Al-Ani OA, Sabaawi AMA, Goss JP, Cowern NEB, Briddon PR, Rayson MJ. Investigation into efficiency-limiting defects in mc-Si solar cells. Solid State Phenomena 2016, 242, 96-101.
- Al-Hadidi M, Goss JP, Briddon PR, Al-Hamadany R, Ahmed M, Rayson MJ. First-principles investigation of carbon substitution for lead in ferroelectric lead titanate. Ferroelectrics 2016, 498(1), 12-17.
- Oberg S, Adjizian JJ, Erbahar D, Rio J, Humbert B, Dossot M, Soldatov A, Lefrant S, Mevellec JY, Briddon P, Rayson MJ, Ewels CP. Effect of functionalization and charging on resonance energy and radial breathing modes of metallic carbon nanotubes. Physical Review B 2016, 93(4), 045408.
- Etmimi KM, Briddon PR, Abutruma AM, Sghayer A, Farhat SS. Density functional theory study of substitutional oxygen in diamond. Condensed Matter Physics 2016, 19(3), 33301.
- Rio J, Erbahar D, Rayson M, Briddon P, Ewels CP. Cyclotetrahalo-p-phenylenes: simulations of halogen substituted cycloparaphenylenes and their interaction with C-60. Physical Chemistry Chemical Physics 2016, 18(33), 23257-23263.
- Belabbas I, Chen J, Heggie MI, Latham CD, Rayson MJ, Briddon PR, Nouet G. Core properties and mobility of the basal screw dislocation in wurtzite GaN: a density functional theory study. Modelling and Simulation in Materials Science and Engineering 2016, 24(7).
- Al-Hadidi M, Goss JP, Briddon PR, Al-hamadany R, Ahmed M, Rayson MJ. Association of oxygen vacancies with carbon impurity in strontium titanate: first principles calculations. Ferroelectrics 2016, 497(1), 9-14.
- Peaker CV, Atumi MK, Goss JP, Briddon PR, Horsfall AB, Rayson MJ, Jones R. Assignment of 13C hyperfine interactions in the P1-center in diamond. Diamond and Related Materials 2016, 70, 118-123.
- Yaya A, Ewels CP, Efavi JK, Agyei-Tuffour B, Kan-Dapaah K, Onwona-Agyeman B, Abavare EKK, Hassanali A, Briddon PR. A study of polybromide chain formation using carbon nanomaterials via density functional theory approach. Cogent Engineering 2016, 3(1), 1261509.
- Al-Ani OA, Goss JP, Cowern NEB, Briddon PR, Al-Hadidi M, Al-Hamadany R, Rayson MJ. A density functional study of iron segregation at ISFs and Sigma-5-(001) GBs in mc-Si. Solid State Phenomena 2016, 242, 224-229.
- Rashid M, Tiwari AK, Wood N, Briddon P, Goss JP, Rayson MJ, Wright N, Horsfall AB. Tuning Optoelectronic Properties of 4H-SiC QDs Using-H,-OH and-F Surface Functionalisation. Materials Science Forum 2015, 821-823, 375-378.
- Peaker CV, Goss JP, Briddon PR, Horsfall AB, Rayson MJ. The vacancy-hydrogen defect in diamond: A computational study. Physica Status Solidi(A) 2015, 212(11), 2431-2436.
- Kioseoglou J, Pavloudis T, Kehagias T, Komninou P, Karakostas T, Latham CD, Rayson MJ, Briddon PR, Eickhoff M. Structural and electronic properties of GaN nanowires with embedded InxGa1-xN nanodisks. Journal of Applied Physics 2015, 118(3), 034301.
- Ewels CP, Rocquefelte X, Kroto HW, Rayson MJ, Briddon PR, Heggie MI. Predicting experimentally stable allotropes: Instability of penta-graphene. Proceedings of the National Academy of Sciences of the United States of America 2015, 112(51), 15609-15618.
- Latham CD, McKenna AJ, Trevethan TP, Heggie MI, Rayson MJ, Briddon PR. On the validity of empirical potentials for simulating radiation damage in graphite: a benchmark. Journal of Physics: Condensed Matter 2015, 27(31), 316301.
- Peaker CV, Goss JP, Briddon PR, Horsfall AB, Rayson MJ. Di-nitrogen-vacancy-hydrogen defects in diamond: a computational study. Physica Status Solidi (A) 2015, 212(11), 2616-2620.
- Heikkinen O, Pinto H, Sinha G, Hamalainen SK, Sainio J, Oberg S, Briddon PR, Foster AS, Lahtinent J. Characterization of a Hexagonal Phosphorus Adlayer on Platinum (111). The Journal of Physical Chemistry Part C 2015, 119(22), 12291-12297.
- Al-Hadidi M, Goss JP, Briddon PR, AL-Hamadany R, Ahmed M, Rayson MJ. Carbon impurities in SrTiO3 from first principles. Modelling and Simulation in Materials Science and Engineering 2015, 23, 015002.
- Zhachuk RA, Coutinho J, Rayson MJ, Briddon PR. Buckling of reconstruction elements of the edges of triple steps on vicinal Si(111) surfaces. Journal of Experiemental and Theoretical Physics 2015, 120(4), 632-637.
- Trevethan T, Latham CD, Heggie MI, Briddon PR, Rayson MJ. Vacancy diffusion and coalescence in graphene directed by defect strain fields. Nanoscale 2014, 6(5), 2978-2986.
- Tiwari AK, Goss JP, Briddon PR, Horsfall AB, Wright NG, Jones R, Rayson MJ. Unexpected change in the electron affinity of diamond caused by the ultra-thin transition metal oxide films. Europhysics Letters 2014, 108(4), 46005.
- Tiwari AK, Goss JP, Briddon PR, Horsfall AB, Wright NG, Jones R, Rayson MJ. Unexpected change in the electron affinity of diamond caused by the ultra-thin transition metal oxide films. EPL (Europhysics Letters) 2014, 108(4), 46005.
- Zhachuk R, Teys S, Coutinho J, Rayson MJ, Briddon PR. Static and dynamic buckling of reconstructions at triple steps on Si(111) surfaces. Applied Physics Letters 2014, 105(17), 171602.
- Pereira RN, Coutinho J, Niesar S, Oliveira TA, Aigner W, Wiggers H, Rayson MJ, Briddon PR, Brandt MS, Stutzmann M. Resonant Electronic Coupling Enabled by Small Molecules in Nanocrystal Solids. Nano Letters 2014, 14(7), 3817-3826.
- Ewels CP, Erbahar D, Wagner P, Rocquefelte X, Arenal R, Pochet P, Rayson M, Scardamaglia M, Bittencourt C, Briddon P. Nitrogen segregation in nanocarbons. Faraday Discussions 2014, 173, 215-232.
- Trevethan T, Latham CD, Heggie MI, Rayson MJ, Briddon PR. Interlayer vacancy diffusion and coalescence in graphite. Physical Review B 2014, 90(17), 174108.
- Goss JP, Briddon PR, Hill V, Jones R, Rayson MJ. Identification of the structure of the 3107 cm-1 H-related defect in diamond. Journal of Physics: Condensed Matter 2014, 26(14), 145801.
- Santos P, Coutinho J, Torres VJB, Rayson MJ, Briddon PR. Hydrogen passivation of titanium impurities in silicon: Effect of doping conditions. Applied Physics Letters 2014, 105(3), 032108.
- Cherifi RO, Ivanovskaya V, Phillips LC, Zobelli A, Infante IC, Jacquet E, Garcia V, Fusil S, Briddon PR, Guiblin N, Mougin A, Unal AA, Kronast F, Valencia S, Dkhil B, Barthelemy A, Bibes M. Electric-field control of magnetic order above room temperature. Nature Materials 2014, 13(4), 345-351.
- Adjizian JJ, Briddon P, Humbert B, Duvail JL, Wagner P, Adda C, Ewels C. Dirac Cones in two-dimensional conjugated polymer networks. Nature Communications 2014, 5, 5842.
- Latham CD, Heggie MI, Alatalo M, Oberg S, Briddon PR. The contribution made by lattice vacancies to the Wigner effect in radiation-damaged graphite. Journal of Physics: Condensed Matter 2013, 25(13), 135403.
- Al-Hamadany R, Goss JP, Briddon PR, Mojarad SA, Al-Hadidi M, O'Neill AG, Rayson MJ. Oxygen vacancy migration in compressively strained SrTiO3. Journal of Applied Physics 2013, 113(2), 024108.
- Carvalho A, Oberg S, Rayson MJ, Briddon PR. Increased Electronic Coupling in Silicon Nanocrystal Networks Doped with F4-TCNQ. Journal of Nanoscience and Nanotechnology 2013, 13(2), 1035-1038.
- AL-Hamadany R, Goss JP, Briddon PR, Mojarad SA, O'Neill AG, Rayson MJ. Impact of tensile strain on the oxygen vacancy migration in SrTiO3: Density functional theory calculations. Journal of Applied Physics 2013, 113(22), 224108-1-224108-8.
- Atumi MK, Goss JP, Briddon PR, Shrif FE, Rayson MJ. Hyperfine interactions at nitrogen interstitial defects in diamond. Journal of Physics: Condensed Matter 2013, 25(6), 065802.
- Trevethan T, Dyulgerova P, Latham CD, Heggie MI, Seabourne CR, Scott AJ, Briddon PR, Rayson MJ. Extended Interplanar Linking in Graphite Formed from Vacancy Aggregates. Physical Review Letters 2013, 111(9), 095501.
- Adjizian JJ, Latham CD, Oberg S, Briddon PR, Heggie MI. DFT study of the chemistry of sulfur in graphite, including interactions with defects, edges and folds. Carbon 2013, 62, 256-262.
- Wagner P, Ewels CP, Adjizian JJ, Magaud L, Pochet P, Roche S, Lopez-Bezanilla A, Ivanovskaya VV, Yaya A, Rayson M, Briddon P, Humbert B. Band Gap Engineering via Edge-Functionalization of Graphene Nanoribbons. Journal of Physical Chemistry C 2013, 117(50), 26790-26796.
- Atumi MK, Goss JP, Briddon PR, Rayson MJ. Atomistic modeling of the polarization of nitrogen centers in diamond due to growth surface orientation. Physical Review B 2013, 88(24), 245301.
- Tiwari AK, Goss JP, Briddon PR, Wright NG, Horsfall AB, Jones R, Pinto H, Rayson MJ. Thermodynamic stability and electronic properties of F- and Cl-terminated diamond. Physica Status Solidi A 2012, 209(9), 1709-1714.
- Pinto H, Jones R, Palmer DW, Goss JP, Briddon PR, Oberg S. On the diffusion of NV defects in diamond. Physica Status Solidi A 2012, 209(9), 1765-1768.
- Hedlund J, Grahn M, Korelskiy D, Rayson M, Oberg S, Briddon PR. Mass transport in porous media from first principles: An experimental and theoretical study. Journal of Membrane Science 2012, 415-416, 271-277.
- Carvalho A, Santos P, Coutinho J, Jones R, Rayson MJ, Briddon PR. Light induced degradation in B doped Cz-Si solar cells. physica status solidi (a) 2012, 209(10), 1894-1897.
- Markevich A, Jones R, Oberg S, Rayson MJ, Goss JP, Briddon PR. First-principles study of hydrogen and fluorine intercalation into graphene-SiC(0001) interface. Physical Review B 2012, 86(4), 045453.
- Pinto H, Jones R, Palmer DW, Goss JP, Tiwari AK, Briddon PR, Wright NG, Horsfall AB, Rayson MJ, Oberg S. First-principles studies of the effect of (001) surface terminations on the electronic properties of the negatively charged nitrogen-vacancy defect in diamond. Physical Review B 2012, 86(4), 045313.
- Carvalho A, Oberg S, Rayson MJ, Briddon PR. Electronic properties, doping, and defects in chlorinated silicon nanocrystals. Physical Review B 2012, 86(4), 045308.
- Tiwari AK, Goss JP, Briddon PR, Wright NG, Horsfall AB, Rayson MJ. Electronic and structural properties of diamond (001) surfaces terminated by selected transition metals. Physical Review B 2012, 86(15), 155301.
- Coutinho J, Markevich VP, Peaker AR, Hamilton B, Lastovskii SB, Murin LI, Svensson BJ, Rayson MJ, Briddon PR. Electronic and dynamical properties of the silicon trivacancy. Physical Review B 2012, 86(17), 174101.
- Camps I, Coutinho J, Mir M, da Cunha AF, Rayson MJ, Briddon PR. Elastic and optical properties of Cu2ZnSn(SexS1-x)(4) alloys: density functional calculations. Semiconductor Science and Technology 2012, 27(11), 115001.
- Carvalho A, Rayson MJ, Briddon PR. Effect of Oxidation on the Doping of Silicon Nanocrystals with Group III and Group V Elements. Journal of Physical Chemistry C 2012, 116(14), 8243-8250.
- Tiwari AK, Goss JP, Briddon PR, Wright NG, Horsfall AB, Rayson MJ. Effect of different surface coverages of transition metals on the electronic and structural properties of diamond. Physica Status Solidi A 2012, 209(9), 1697-1702.
- Tiwari AK, Goss JP, Briddon P, Wright NG, Horsfall AB. Density Functional Simulations of Transition Metal Terminated (001)-Diamond Surfaces. Materials Science Forum 2012, 717-720, 1311-1314.
- Tiwari AK, Goss JP, Briddon PR, Wright NG, Horsfall AB, Rayson MJ. Bromine functionalisation of diamond: An ab initio study. Physica Status Solidi A 2012, 209(9), 1703-1708.
- Pinto H, Palmer DW, Jones R, Goss JR, Briddon PR, Oberg S. Ab Initio Studies of Fluorine Passivation on the Electronic Structure of the NV- Defect in Nanodiamond. Journal of Nanoscience and Nanotechnology 2012, 12(11), 8589-8593.
- Markevich VP, Peaker AR, Hamilton B, Litvinov VV, Pokotilo YM, Lastovskii SB, Coutinho J, Carvalho A, Rayson MJ, Briddon PR. Tin-vacancy complex in germanium. Journal of Applied Physics 2011, 109(8), 083705.
- Pinto H, Jones R, Palmer DW, Goss JP, Briddon PR, Oberg S. Theory of the surface effects on the luminescence of the NV- defect in nanodiamond. Physica Status Solidi A: Applications and Materials Science 2011, 208(9), 2045-2050.
- Wang J, Schenk K, Carvalho A, Wylie-van Eerd B, Trodahl J, Sandu CS, Bonin M, Gregora I, He ZB, Yamada T, Funakubo H, Briddon PR, Setter N. Structure Determination and Compositional Modification of Body-Centered Tetragonal PX-Phase Lead Titanate. Chemistry of Materials 2011, 23(10), 2529-2535.
- Ulbricht R, van der Post ST, Goss JP, Briddon PR, Jones R, Khan RUA, Bonn M. Single substitutional nitrogen defects revealed as electron acceptor states in diamond using ultrafast spectroscopy. Physical Review B 2011, 84(16), 165202.
- Wagner P, Ewels CP, Ivanovskaya VV, Briddon PR, Pateau A, Humbert B. Ripple edge engineering of graphene nanoribbons. Physical Review B 2011, 84(13), 134110.
- Ivanovskaya VV, Zobelli A, Wagner P, Heggie MI, Briddon PR, Rayson MJ, Ewels CP. Low-Energy Termination of Graphene Edges via the Formation of Narrow Nanotubes. Physical Review Letters 2011, 107(6), 065502.
- Carvalho A, Oberg S, Briddon PR. Intrinsic defect complexes in CdTe and ZnTe. Thin Solid Films 2011, 519(21), 7468-7471.
- Leitao JP, Carvalho A, Coutinho J, Pereira RN, Santos NM, Ankiewicz AO, Sobolev NA, Barroso M, Hansen JL, Larsen AN, Briddon PR. Influence of Ge content on the optical properties of X and W centers in dilute Si-Ge alloys. Physical Review B 2011, 84(16), 165211.
- Silva EL, Coutinho J, Carvalho A, Torres VJB, Barroso M, Jones R, Briddon PR. Electronic structure of Zn, Cu and Ni impurities in germanium. Journal of Physics: Condensed Matter 2011, 23(6), 065802.
- Carvalho A, Coutinho J, Barroso M, Silva EL, Oberg S, Rayson M, Briddon PR. Electronic structure modification of Si nanocrystals with F-4-TCNQ. Physical Review B 2011, 84(12), 125437.
- Markevich A, Jones R, Briddon PR. Doping of fluorographene by surface adsorbates. Physical Review B 2011, 84(11), 115439.
- Goss JP, Briddon PR. Calculated strain response of vibrational modes for H-containing point defects in diamond. Physical Chemistry Chemical Physics 2011, 13(24), 11488-11494.
- Tiwari AK, Goss JP, Briddon PR, Wright NG, Horsfall AB, Jones R, Pinto H, Rayson MJ. Calculated electron affinity and stability of halogen-terminated diamond. Physical Review B 2011, 84(24), 245305.
- Yaya A, Ewels CP, Suarez-Martinez I, Wagner P, Lefrant S, Okotrub A, Bulusheva L, Briddon PR. Bromination of graphene and graphite. Physical Review B 2011, 83(4), 045411.
- Goss JP, Ewels CP, Briddon PR, Fritsch E. Bistable N-2-H complexes: The first proposed structure of a H-related colour-causing defect in diamond. Diamond and Related Materials 2011, 20(7), 896-901.
- Wagner P, Ewels CP, Suarez-Martinez I, Guiot V, Cox SFJ, Lord JS, Briddon PR. Behavior of hydrogen ions, atoms, and molecules in alpha-boron studied using density functional calculations. Physical Review B 2011, 83(2), 024101.
- Raghavan S, Carvalho A, Le Formal F, Setter N, Oberg S, Briddon PR. Adsorbate-localized states at water-covered (100) SrTiO3 surfaces. Applied Physics Letters 2011, 98(1), 012106.
- Briddon PR, Rayson MJ. Accurate Kohn-Sham DFT with the speed of tight binding: Current techniques and future directions in materials modelling. Physica Status Solidi B: Basic Soid State Research 2011, 248(6), 1309-1318.
- Pinto H, Jones R, Goss JP, Briddon PR. Unexpected change in the electronic properties of the Au-graphene interface caused by toluene. Physical Review B 2010, 82(12), 125407.
- Pinto H, Jones R, Goss J, Briddon P. Unexpected change in the electronic properties of the Au-graphene interface caused by toluene. Physical Review B: Condensed Matter and Materials Physics 2010, 82(12), 125407.
- Goss JP, Briddon PR, Pinto H, Jones R. Optically active point defects in high quality single crystal diamond. Physica Status Solidi A: Applications and Materials Science 2010, 207(9), 2049-2053.
- Pinto H, Jones R, Goss JP, Briddon PR. Mechanisms of doping graphene. Physica Status Solidi. A: Applications and Materials Science 2010, 207(9), 2131-2136.
- Liggins S, Newton M, Goss J, Briddon P, Fisher D. Identification of the dinitrogen (001) split interstitial H1a in diamond. Physical Review B: Condensed Matter and Materials Physics 2010, 81(8), 085214.
- Liggins S, Newton ME, Goss JP, Briddon PR, Fisher D. Identification of the dinitrogen < 001 > split interstitial H1a in diamond. Physical Review B 2010, 81(8), 085214.
- Ivanovskaya VV, Zobelli A, Teillet-Billy D, Rougeau N, Sidis V, Briddon PR. Hydrogen adsorption on graphene: a first principles study. European Physical Journal B 2010, 76(3), 481-486.
- D'Haenens-Johansson UFS, Edmonds AM, Newton ME, Goss JP, Briddon PR, Baker JM, Martineau PM, Khan RUA, Twitchen DJ, Williams SD. EPR of a defect in CVD diamond involving both silicon and hydrogen that shows preferential alignment. Physical Review B 2010, 82(15), 155205.
- D'Haenens-Johansson U, Edmonds A, Newton M, Goss J, Briddon P, Baker J, Martineau P, Khan R, Twitchen D, Williams S. EPR of a defect in CVD diamond involving both silicon and hydrogen that shows preferential alignment. Physical Review B: Condensed Matter and Materials Physics 2010, 82(15), 155205.
- Ivanovskaya VV, Zobelli A, Teillet-Billy D, Rougeau N, Sidis V, Briddon PR. Enhanced H-2 catalytic formation on specific topological defects in interstellar graphenic dust grain models. Physical Review B 2010, 82(24), 245407.
- Carvalho A, Tagantsev AK, Oberg S, Briddon PR, Setter N. Cation-site intrinsic defects in Zn-doped CdTe. Physical Review B 2010, 81(7), 075215.
- Carvalho A, Tagantsev A, Öberg S, Briddon P, Setter N. Cation-site intrinsic defects in Zn-doped CdTe. Physical Review B: Condensed Matter and Materials Physics 2010, 81(7), 075215.
- Etmimi KM, Goss JP, Briddon PR, Gsiea AM. A density functional theory study of models for the N3 and OK1 EPR centres in diamond. Journal of Physics: Condensed Matter 2010, 22(38), 385502.
- Markevich VP, Peaker AR, Lastovskii SB, Murin LI, Coutinho J, Torres VJB, Briddon PR, Dobaczewski L, Monakhov EV, Svensson BG. Trivacancy and trivacancy-oxygen complexes in silicon: Experiments and ab initio modeling. Physica Review B 2009, 80(23), 235207.
- Markevich V, Peaker A, Lastovskii S, Murin L, Coutinho J, Torres V, Briddon P, Dobaczewski L, Monakhov E, Svensson B. Trivacancy and trivacancy-oxygen complexes in silicon: Experiments and ab initio modeling. Physical Review B: Condensed Matter and Materials Physics 2009, 80(23), 235207.
- Jones R, Carlvalho A, Goss JP, Briddon PR. The self-interstitial in silicon and germanium. Materials Science and Engineering: B 2009, 159-160, 112-116.
- Guiot V, Suarez-Martinez I, Wagner P, Goss JP, Briddon PR, Allaf A, Ewels C. Structure and vibrational properties of oxohalides of vanadium. Inorganic Chemistry 2009, 48(8), 3660-3666.
- Ribeiro RM, Pereira VM, Peres NMR, Briddon PR, Neto AHC. Strained graphene: tight-binding and density functional calculations. New Journal of Physics 2009, 11, -.
- Galindo MA, Amantia D, Clegg W, Harrington RW, Eyre RJ, Goss JP, Briddon PR, McFarlane W, Houlton A. Self-assembly of a bis(adeninyl)-Cu(I) complex: a cationic nucleobase duplex mimic. Chemical Communications 2009, 2009(20), 2833-2835.
- Pinto H, Jones R, Goss JP, Briddon PR. p-type doping of graphene with F4-TCNQ. Journal of Physics: Condensed Matter 2009, 21(40), 402001.
- Etmimi K, Ahmed M, Briddon P, Goss J, Gsiea A. Nitrogen-pair paramagnetic defects in diamond: A density functional study. Physical Review B 2009, 79(20), 205207.
- MacLeod RM, Murray SW, Goss JP, Briddon PR, Eyre RJ. Model thermodynamics and the role of free-carrier energy at high temperatures: Nitrogen and boron pairing in diamond. Physical Review B 2009, 80(5), 054106.
- Rayson M, Briddon P. Highly efficient method for Kohn-Sham density functional calculations of 500-10000 atom systems. Physical Review B: Condensed Matter and Materials Physics 2009, 80(20), 205104.
- Rayson MJ, Briddon PR. Highly efficient method for Kohn-Sham density functional calculations of 500-10 000 atom systems. Physical Review B 2009, 80(20), 205104.
- Etmimi KM, Goss JP, Briddon PR, Gsiea AM. Density functional studies of muonium in nitrogen aggregate containing diamond: the Mu(X) centre. Journal of Physics: Condensed Matter 2009, 21(36), 364211.
- Goss JP, Eyre RJ, Briddon PR, Mainwood A. Density functional simulations of noble-gas impurities in diamond. Physical Review B 2009, 80(8), 085204.
- Ivanovskaya VV, Zobelli A, Stephan O, Briddon PR, Colliex C. BN Domains Included into Carbon Nanotubes: Role of Interface. Journal of Physical Chemistry C 2009, 113(38), 16603-16609.
- Jones R, Goss JP, Briddon PR. Acceptor level of nitrogen in diamond and the 270-nm absorption band. Physical Review B 2009, 80(3), 033205.
- Goss JP, Eyre RJ, Briddon PR. Theoretical models for doping diamond for semiconductor applications. Physica Status Solidi B 2008, 245(9), 1679-1700.
- Fujita N, Jones R, Oberg S, Briddon PR. Theoretical investigation on the interaction of nitrogen with dislocations in single crystal CVD diamond. Diamond and Related Materials 2008, 17(2), 123-126.
- Eyre RJ, Goss JP, Briddon PR. The effect of progressive oxidation on the optical properties of small Silicon Quantum Dots: A computational study. Physical Review B 2008, 77(24), 245407.
- Latham CD, Heggie MI, Gamez JA, Suarez-Martinez I, Ewels CP, Briddon PR. The di-interstitial in graphite. Journal of Physics: Condensed Matter 2008, 20(39), -.
- Bangert U, Eberlein T, Nair RR, Jones R, Gass M, Bleloch AL, Novoselov KS, Geim A, Briddon PR. STEM plasmon spectroscopy of free standing graphene. Physica Status Solidi. A: Applications and Materials Science 2008, 205(9), 2265-2269.
- Eyre RJ, Goss JP, MacLeod RM, Briddon PR. Stability of singly hydrated silanone on silicon quantum dot surfaces: density functional simulations. Physical Chemistry Chemical Physics 2008, 10, 4495-4502.
- Rayson MJ, Briddon PR. Rapid iterative method for electronic-structure eigenproblems using localised basis functions. Computer Physics Communications 2008, 178(2), 128-134.
- Eberlein T, Bangert U, Nair RR, Jones R, Gass M, Bleloch AL, Novoselov KS, Geim A, Briddon PR. Plasmon spectroscopy of free-standing graphene films. Physical Review B 2008, 77(23), 233406.
- Jones R, Eberlein TAG, Briddon PR. On the doping of graphene. Physica Status Solidi. A: Applications and Materials Science 2008, 205(9), 2262-2264.
- Ribeiro RM, Peres NMR, Coutinho J, Briddon PR. Inducing energy gaps in monolayer and bilayer graphene: Local density approximation calculations. Physical Review B 2008, 78(7), 075442.
- Carvalho A, Jones R, Goss JP, Janke C, Öberg S, Briddon PR. First-principles study of the diffusion mechanisms of the self-interstitial in germanium. Journal of Physics: Condensed Matter 2008, 20(13), 135220.
- Carvalho A, Coutinho J, Jones R, Goss J, Barroso M, Briddon PR. First-principles study of Fe and FeAl defects in SiGe alloys. Physical Review B 2008, 78(12), 125208.
- Rayson MJ, Briddon PR. First principles method for the calculation of zero-field splitting tensors in periodic systems. Physical Review B 2008, 77(3), 035119.
- Baker JM, van Wyk JA, Goss JP, Briddon PR. Electron paramagnetic resonance of sulfur at a split-vacancy site in diamond. Physical Review B 2008, 78(23), 235203.
- Eberlein TAG, Jones R, Goss JP, Briddon PR. Doping of graphene: Density functional calculations of charge transfer between GaAs and graphene and carbon nanostructures. Physical Review B 2008, 78(4), 045403.
- Goss JP, Briddon PR. Dissociation of B-H pairs in diamond as enhanced by electronic excitation and electron capture: Computational modeling. Physical Review B 2008, 77(3), 035211.
- Carvalho A, Coutinho J, Jones R, Silva E, Öberg S, Briddon P. Density-functional theory study of Au, Ag and Cu defects in germanium. Materials Science in Semiconductor Processing 2008, 11(5), 340-343.
- Khirunenko L, Pomozov Y, Sosnin M, Markevich V, Murin L, Litvinov V, Carvalho A, Jones R, Coutinho J, Öberg S, Briddon P. Complexes of self-interstitials with oxygen atoms in germanium. Materials Science in Semiconductor Processing 2008, 11(5), 344-347.
- Goss JP, Eyre RJ, Briddon PR. Bound substitutional impurity pairs in diamond: a density functional study. Journal of Physics: Condensed Matter 2008, 20(8), 085217.
- Torres VJB, Coutinho J, Briddon PR, Barroso M. Ab-initio vibrational properties of SiGe alloys. Thin Solid Films 2008, 517(1), 395-397.
- Janke C, Jones R, Oberg S, Briddon PR. Ab initio investigation of phosphorus diffusion paths in germanium. Physical Review B 2008, 77(19), 195210.
- Janke C, Jones R, Coutinho J, Oberg S, Briddon P. Ab initio investigation of phosphorus and boron diffusion in germanium. Materials Science in Semiconductor Processing 2008, 11(5), 324-327.
- Janke C, Jones R, Oberg S, Briddon PR. Ab initio investigation of boron diffusion paths in germanium. Physical Review B 2008, 77(7), 075208.
- Goss JP, Briddon PR. Theoretical study of Li and Na as n-type dopants for diamond. Physical Review B 2007, 75(7), 075202.
- Janke C, Jones R, Oberg S, Briddon PR. Supercell and cluster density functional calculations of the thermal stability of the divacancy in germanium. Physical Review B - Condensed Matter and Materials Physics 2007, 75(19), -.
- Coutinho J, Janke C, Carvalho A, Torres VJB, Oberg S, Jones R, Briddon PR. Strong compensation of n-type Ge via formation of donor-vacancy complexes. Physica B: Condensed Matter 2007, 401-402, 179-183.
- Eberlein TAG, Jones R, Oberg S, Briddon PR. Shallow acceptors in GaN. Applied Physics Letters 2007, 91(13), -.
- Carvalho A, Jones R, Goss J, Janke C, Coutinho J, Oberg S, Briddon PR. Self-interstitials and Frenkel pairs in electron-irradiated germanium. Physica B: Condensed Matter 2007, 401-402, 495-498.
- Carvalho A, Jones R, Janke C, Goss JP, Briddon PR, Coutinho J, Oberg S. Self-interstitial in germanium. Physical Review Letters 2007, 99(17), 175502.
- Carvalho A, Jones R, Torres VJB, Coutinho J, Markevich V, Oberg S, Briddon PR. Oxygen defects in irradiated germanium. Journal of Materials Science: Materials in Electronics 2007, 18(7), 781-786.
- Fujita N, Jones R, Oberg S, Briddon PR. Nitrogen related shallow thermal donors in silicon. Applied Physics Letters 2007, 91(5), -.
- Eyre RJ, Goss JP, Briddon PR, Wardle MG. Multi-impurity complexes for n-type diamond: A computational study. Physica Status Solidi (A) Applications and Materials 2007, 204(9), 2971-2977.
- Goss JP, Rayson MJ, Briddon PR, Baker JM. Metastable Frenkel pairs and the W11-W14 electron paramagnetic resonance centers in diamond. Physical Review B 2007, 76(4), 045203.
- Carvalho A, Jones R, Coutinho J, Torres VJB, Oberg S, Alsina JMC, Shaw M, Briddon PR. Local-density-functional calculations of the vacancy-oxygen center in Ge. Physical Review B 2007, 75(11), 115206.
- Torres VJB, Coutinho J, Briddon PR. Local vibrational modes of Zn-H-P in GaP, InP and ZnTe. Diffusion and Defect Data, Part A: Defect and Diffusion Forum 2007, 261-262, 31-35.
- Fujita N, Jones R, Oberg S, Briddon PR. Local vibrational modes of N2-On defects in Cz-Silicon. Journal of Materials Science: Materials in Electronics 2007, 18(7), 683-687.
- Khirunenko LI, Pomozov YuV, Sosnin MG, Duvanskii A, Torres VJB, Coutinho J, Jones R, Briddon PR, Abrosimov NV, Riemann H. Interstitial carbon-related defects in Si1-xGex alloys. Physica B: Condensed Matter 2007, 401-402, 200-204.
- Carvalho A, Barker SJ, Jones R, Williams RS, Ashwin MJ, Newman RC, Stavrinou PN, Parry G, Jones TS, Oberg S, Briddon PR. Identification of the local vibrational modes of small nitrogen clusters in dilute GaAsN. Physica B: Condensed Matter 2007, 401-402, 339-342.
- Carvalho A, Torres VJB, Markevich VP, Coutinho J, Litvinov VV, Peaker AR, Jones R, Briddon PR. Identification of stable and metastable forms of VO2 centers in germanium. Physica B: Condensed Matter 2007, 401-402, 192-195.
- Fujita N, Jones R, Oberg S, Briddon PR. First-principles study on the local vibrational modes of nitrogen-oxygen defects in silicon. Physica B: Condensed Matter 2007, 401-402, 159-162.
- Savini G, Heggie MI, Oberg S, Briddon PR. Electrical activity and migration of 90° partial dislocations in SiC. New Journal of Physics 2007, 9(6), 1-13.
- Coutinho J, Torres VJB, Oberg S, Carvalho A, Janke C, Jones R, Briddon PR. Early stage donor-vacancy clusters in germanium. Journal of Materials Science: Materials in Electronics 2007, 18(7), 769-773.
- Eyre RJ, Goss JP, Briddon PR. Density functional study of oxygen migration processes for silicon quantum dots. Physical Review B 2007, 76(24), 245325.
- Goss JP, Briddon PR, Shaw MJ. Density functional simulations of silicon-containing point defects in diamond. Physical Review B 2007, 76(7), 075204.
- Fujita N, Blumenau AT, Jones R, Oberg S, Briddon PR. Core reconstructions of the 〈100〉 edge dislocation in single crystal CVD diamond. Physica Status Solidi (A) Applications and Materials 2007, 204(7), 2211-2215.
- Sque SJ, Jones R, Oberg S, Briddon PR. Carbon nanotubes and their interaction with the surface of diamond. Physical Review B: Condensed Matter and Materials Physics 2007, 75(11), 115328.
- Torres VJB, Coutinho J, Briddon PR. Ab-initio modeling of carbon and carbon-hydrogen defects in InAs. Physica B: Condensed Matter 2007, 401-402, 275-277.
- Janke C, Jones R, Oberg S, Briddon PR. Ab initio studies of arsenic and boron related defects in silicon mesa diodes. Applied Physics Letters 2007, 90(15), 152103.
- Janke C, Jones R, Oberg S, Briddon PR. Ab initio investigation of boron diffusion paths in germanium. Journal of Materials Science: Materials in Electronics 2007, 18(7), 775-780.
- Eyre RJ, Goss JP, Briddon PR. A density functional study of oxygen migration processes for silicon quantum dots. Physical Review B 2007, 76(24), 245325.
- Sque SJ, Jones R, Oberg S, Briddon PR. Transfer doping of diamond: Buckminsterfullerene on hydrogenated, hydroxylated, and oxygenated diamond surfaces. Journal of Materials Science: Materials in Electronics 2006, 17(6), 459-465.
- Goss JP, Briddon PR. Theory of boron aggregates in diamond: First-principles calculations. Physical Review B 2006, 73(8), 085204.
- Sque SJ, Jones R, Briddon PR. Structure, electronics, and interaction of hydrogen and oxygen on diamond surfaces. Physical Review B 2006, 73(8), 085313.
- Wardle MG, Goss JP, Briddon PR. Relationship between binding site and pressure dependence for defect-hydrogen complexes in ZnO. Applied Physics Letters 2006, 88(26), 261906.
- Goss JP, Briddon PR, Jones R, Heggie MI. Platelets and the <110>a0/4 {001} stacking fault in diamond. Physical Review B 2006, 73(11), 115204.
- Ewels CP, Van Lier G, Charlier J-C, Heggie MI, Briddon PR. Pattern formation on carbon nanotube surfaces. Physical Review Letters 2006, 96(21), 216103.
- Hounsome LS, Jones R, Martineau PM, Fisher D, Shaw MJ, Briddon PR, Oberg S. Origin of brown coloration in diamond. Physical Review B 2006, 73(12), 125203.
- Goss JP, Shaw MJ, Briddon PR. Marker-method calculations for electrical levels using Gaussian-orbital basis sets. Topics in Applied Physics 2006, 104, 69-94.
- Pereira RN, Nielsen BB, Coutinho J, Torres VJB, Briddon PR. Hydrogen self-trapping near silicon atoms in Ge-rich SiGe alloys. Applied Physics Letters 2006, 88(14), 142112.
- Wardle MG, Goss JP, Briddon PR. First-principles study of the diffusion of hydrogen in ZnO. Physical Review Letters 2006, 96(20), 205504.
- Carvalho A, Jones R, Sanati M, Estreicher SK, Coutinho J, Briddon PR. First-principles investigation of a bistable boron-oxygen interstitial pair in Si. Physical Review B 2006, 73(24), 245210.
- Bangert U, Barnes R, Hounsome LS, Jones R, Blumenau AT, Briddon PR, Shaw MJ, Oberg S. Electron energy loss spectroscopic studies of brown diamonds. Philosophical Magazine 2006, 86(29-31), 4757-4779.
- Eberlein TAG, Jones R, Blumenau AT, Oberg S, Briddon PR. Effect of charge on the movement of dislocations in SiC. Applied Physics Letters 2006, 88(8), 082113.
- Larsen AN, Mesli A, Bonde Nielsen K, Nielsen HK, Dobaczewski L, Adey J, Jones R, Palmer DW, Briddon PR, Oberg S. E center in silicon has a donor level in the band gap. Physical Review Letters 2006, 97(10), 106402.
- Coutinho J, Oberg S, Torres VJB, Barroso M, Jones R, Briddon PR. Donor-vacancy complexes in Ge: Cluster and supercell calculations. Physical Review B 2006, 73(23), 235213.
- Goss JP, Briddon PR, Eyre RJ. Donor levels for selected n-type dopants in diamond: A computational study of the effect of supercell size. Physical Review B 2006, 74(24), 245217.
- Eberlein TAG, Jones R, Oberg S, Briddon PR. Density functional theory calculation of the DI optical center in SiC. Physical Review B 2006, 74(14), 144106.
- Coutinho J, Torres VJB, Jones R, Carvalho A, Oberg S, Briddon PR. Calculation of deep carrier traps in a divacancy in germanium crystals. Applied Physics Letters 2006, 88(9), 091919.
- Torres VJB, Coutinho J, Briddon PR, Barroso M. Ab initio modeling of interstitial oxygen in crystalline SiGe alloys. Journal of Non-Crystalline Solids 2006, 352(9-20), 1279-1281.
- Latham CD, Oberg S, Briddon PR, Louchet F. A pseudopotential density functional theory study of native defects and boron impurities in FeAl. Journal of Physics: Condensed Matter 2006, 18(39), 8859-8876.
- Ribeiro RM, Coutinho J, Torres VJB, Jones R, Sque SJ, Oberg S, Shaw MJ, Briddon PR. Ab initio study of CsI and its surface. Physical Review B 2006, 74(3), 035430.
- Balsas A, Torres VJB, Coutinho J, Jones R, Hourahine B, Briddon PR, Barroso M. Vibrational properties of elemental hydrogen centres in Si, Ge and dilute SiGe alloys. Journal of Physics Condensed Matter 2005, 17(22), S2155-S2164.
- Goss JP, Briddon PR, Rayson MJ, Sque SJ, Jones R. Vacancy-impurity complexes and limitations for implantation doping of diamond. Physical Review B - Condensed Matter and Materials Physics 2005, 72(3), 1-11.
- Goss JP, Briddon PR, Rayson MJ, Sque SJ, Jones R. Vacancy-impurity complexes and limitations for implantation doping of diamond. Physical Review B 2005, 72(3), -.
- Goss JP, Briddon PR. Theory of Mn-Ga-H and other acceptor-H complexes in GaAs. Physical Review B 2005, 72(11), 115211.
- Goss JP, Briddon PR. Theory of MnGa-H and other acceptor-H complexes in GaAs. Physical Review B 2005, 72(11), 115211.
- Wardle MG, Goss JP, Briddon PR. Theory of Li in ZnO: A limitation for Li-based p-type doping. Physical Review B 2005, 71(15), 155205.
- Wardle MG, Goss JP, Briddon PR. Theory of Li in ZnO: A limitation for Li-based p-type doping. Physical Review B 2005, 71(15), 155205.
- Eyre RJ, Goss JP, Briddon PR, Hagon JP. Theory of Jahn-Teller distortions of the P donor in diamond. Journal of Physics Condensed Matter 2005, 17(37), 5831-5837.
- Wardle MG, Goss JP, Briddon PR. Theory of Fe, Co, Ni, Cu, and their complexes with hydrogen in ZnO. Physical Review B 2005, 72(15), 155108.
- Adey J, Jones R, Palmer DW, Briddon PR, Oberg S. Theory of boron-vacancy complexes in silicon. Physical Review B - Condensed Matter and Materials Physics 2005, 71(16), 1-6.
- Adey J, Jones R, Palmer DW, Briddon PR, Oberg S. Theory of boron-vacancy complexes in silicon. Physical Review B 2005, 71(16), 165211.
- Rosa AL, El-Barbary AA, Heggie MI, Briddon PR. Structural and thermodynamic properties of water related defects in α-quartz. Physics and Chemistry of Minerals 2005, 32(5-6), 323-331.
- Wardle MG, Goss JP, Briddon PR, Jones R. Structural and electronic properties of thin fluorite-structure NiSi 2, CoSi2 and FeSi2 interfaces and precipitates in Si. Physica Status Solidi (A) Applications and Materials 2005, 202(5), 883-888.
- Latham CD, Alatalo M, Nieminen RM, Jones R, Oberg S, Briddon PR. Passivation of copper in silicon by hydrogen. Physical Review B 2005, 72(23), 235205.
- Latham CD, Alatalo M, Nieminen RM, Jones R, Oberg S, Briddon PR. Passivation of copper in silicon by hydrogen. Physical Review B 2005, 72(23), 235205.
- Hounsome LS, Jones R, Martineau PM, Shaw MJ, Briddon PR, Oberg S, Blumenau AT, Fujita N. Optical properties of vacancy related defects in diamond. physica status solidi (a) 2005, 202(11), 2182-2187.
- Torres VJB, Coutinho J, Briddon PR. Local vibrational modes of Zn-H-As defects in GaAs, ZnSe and ZnTe. Computational Materials Science 2005, 33(1-3), 145-147.
- Hiller M, Lavrov EV, Weber J, Hourahine B, Jones R, Briddon PR. Interstitial H-2 in germanium by Raman scattering and ab initio calculations. Physical Review B 2005, 72(15), 153201.
- Hiller M, Lavrov EV, Weber J, Hourahine B, Jones R, Briddon PR. Interstitial H2 in germanium by Raman scattering and ab initio calculations. Physical Review B 2005, 72(15), 153201.
- Shaw MJ, Briddon PR, Goss JP, Rayson MJ, Kerridge A, Harker AH, Stoneham AM. Importance of quantum tunneling in vacancy-hydrogen complexes in diamond. Physical Review Letters 2005, 95(10), 105502.
- Sque SJ, Jones R, Goss JP, Briddon PR, Oberg S. First-principles study of C60 and C60F36 as transfer dopants for p-type diamond. Journal of Physics: Condensed Matter 2005, 17(2), L21-L26.
- Shaw MJ, Briddon PR, Goss JP, Rayson MJ, Kerridge A, Harker AH, Stoneham AM. Erratum: Importance of Quantum Tunneling in Vacancy-Hydrogen Complexes in Diamond. Physical Review Letters 2005, 95(21), 219901.
- Adey J, Jones R, Briddon PR. Enhanced dopant solubility in strained silicon. Physica Status Solidi C: Current Topics in Solid State Physics 2005, 2(6), 1953-1957.
- Coutinho J, Jones R, Torres VJB, Barroso M, Oberg S, Briddon PR. Electronic structure and Jahn-Teller instabilities in a single vacancy in Ge. Journal of Physics: Condensed Matter 2005, 17(48), L521-L527.
- Petit S, Jones R, Shaw MJ, Briddon PR, Hourahine B, Frauenheim T. Electronic behavior of rare-earth dopants in AlN: A density-functional study. Physical Review B 2005, 72(7), 073205.
- Petit S, Jones R, Shaw MJ, Briddon PR, Hourahine B, Frauenheim T. Electronic behavior of rare-earth dopants in AlN: A density-functional study. Physical Review B 2005, 72(7), 073205.
- Prezzi D, Eberlein TAG, Jones R, Filhol JS, Coutinho J, Shaw MJ, Briddon PR. Electrical activity of Er and Er-O centers in silicon. Physical Review B 2005, 71(24), 245203.
- Prezzi D, Eberlein TAG, Jones R, Filhol JS, Coutinho J, Shaw MJ, Briddon PR. Electrical activity of Er and Er-O centers in silicon. Physical Review B 2005, 71(24), 245203.
- Fujita N, Jones R, Goss JP, Briddon PR, Frauenheim T, Oberg S. Diffusion of nitrogen in silicon. Applied Physics Letters 2005, 87(2), 021902.
- Carvalho A, Jones R, Coutinho J, Briddon PR. Density-functional study of small interstitial clusters in Si: Comparison with experiments. Physical Review B 2005, 72(15), 155208.
- Carvalho A, Jones R, Coutinho J, Briddon PR. Density-functional study of small interstitial clusters in Si: Comparison with experiments. Physical Review B 2005, 72(15), 155208.
- Pereira RN, Nielsen BB, Coutinho J, Torres VJB, Jones R, Ohya T, Itoh KM, Briddon PR. Anharmonicity and lattice coupling of bond-centered hydrogen and interstitial oxygen defects in monoisotopic silicon crystals. Physical Review B - Condensed Matter and Materials Physics 2005, 72(11), 1-13.
- Carvalho A, Jones R, Coutinho J, Briddon PR. Ab initio calculation of the local vibrational modes of the interstitial boron-interstitial oxygen defect in Si. Journal of Physics Condensed Matter 2005, 17(17), L155-L159.
- Goss JP, Briddon PR, Jones R, Oberg S. The lattice location of Ni in diamond: A theoretical study. Journal of Physics Condensed Matter 2004, 16(25), 4567-4578.
- Markevich VP, Peaker AR, Coutinho J, Jones R, Torres VJB, Oberg S, Briddon PR, Murin LI, Dobaczewski L, Abrosimov NV. Structure and properties of vacancy-oxygen complexes in Si1-xGex alloys. Physical Review B 2004, 69(12), 125218.
- Jones R, Hahn I, Goss JP, Briddon PR, Oberg S. Structure and Electronic Properties of Nitrogen Defects in Silicon. Diffusion and Defect Data Pt.B: Solid State Phenomena 2004, 95-96, 93-98.
- Filhol J-S, Jones R, Shaw MJ, Briddon PR. Structure and electrical activity of rare-earth dopants in GaN. Applied Physics Letters 2004, 84(15), 2841.
- Sque SJ, Jones R, Goss JP, Briddon PR. Shallow Donors in Diamond: Chalcogens, Pnictogens, and their Hydrogen Complexes. Physical Review Letters 2004, 92(1), 174021-174024.
- Jones R, Coomer BJ, Briddon PR. Quantum mechanical modelling of defects in semiconductors. Journal of Physics: Condensed Matter 2004, 16(27), S2643-S2657.
- Coutinho J, Jones R, Shaw MJ, Briddon PR, Oberg S. Optically active erbium-oxygen complexes in GaAs. Applied Physics Letters 2004, 84(10), 1683-1685.
- Prezzi D, Eberlein TAG, Filhol J-S, Jones R, Shaw MJ, Briddon PR, Oberg S. Optical and electrical properties of vanadium and erbium in 4H-SiC. Physical Review B 2004, 69(19), 193202.
- Krishnamurthy S, Montalti M, Wardle MG, Shaw MJ, Briddon PR, Svensson K, Hunt MRC, Siller L. Nitrogen ion irradiation of Au(110): Photoemission spectroscopy and possible crystal structures of gold nitride. Physical Review B 2004, 70(4), 045414.
- Goss JP, Briddon PR, Papagiannidis S, Jones R. Interstitial nitrogen and its complexes in diamond. Physical Review B 2004, 70(23), 235208.
- Goss JP, Briddon PR, Papagiannidis S, Jones R. Interstitial nitrogen and its complexes in diamond. Physical Review B 2004, 70(23), 235208.
- Prezzi D, Eberlein TAG, Jones R, Hourahine B, Briddon PR, Oberg S. Hydrogen-related photoluminescent centers in SiC. Physical Review B 2004, 70(20), 205207.
- Prezzi D, Eberlein TAG, Jones R, Hourahine B, Briddon PR, Oberg S. Hydrogen-related photoluminescent centers in SiC. Physical Review B 2004, 70(20), 205207.
- Martsinovich N, Rosa AL, Heggie MI, Briddon PR. First principles calculations of hydrogen aggregation in silicon. Defect and Diffusion Forum 2004, 230-232, 81-91.
- Adey J, Jones R, Briddon PR. Enhanced dopant solubility in strained silicon. Journal of Physics Condensed Matter 2004, 16(50), 9117-9126.
- Goss JP, Briddon PR, Ebertein TAG, Jones R, Pinho N, Blumenau AT, Oberg S. Electrical and optical properties of rod-like defects in silicon. Applied Physics Letters 2004, 85(20), 4633-4635.
- Goss JP, Briddon PR, Jones R, Sque S. Donor and acceptor states in diamond. Diamond and Related Materials 2004, 13(4-8), 684-690.
- Bangert U, Harvey AJ, Jones R, Fall CJ, Blumenau AT, Briddon PR, Schreck M, Hörmann F. Dislocation-induced electronic states and point-defect atmospheres evidenced by electron energy loss imaging. New Journal of Physics 2004, 6(184), 1-10.
- Adey J, Jones R, Palmer D, Briddon P, Öberg S. Degradation of boron-doped Czochralski-grown silicon solar cells. Physical Review Letters 2004, 93(5), 1-55504.
- Balsas A, Coutinho J, Torres VJB, Briddon PR, Barroso M. Calculation of deep states in SiGe alloys: Interstitial carbon-oxygen complexes. Physical Review B 2004, 70(8), 085201.
- Goss JP, Briddon PR, Jones R. Calculated properties of a {113} planar vacancy aggregate in Si. Journal of Physics Condensed Matter 2004, 16(20), 3311-3318.
- Goss JP, Briddon PR, Sque SJ, Jones R. Boron-hydrogen complexes in diamond. Physical Review B - Condensed Matter and Materials Physics 2004, 69(16), 165215-8.
- Goss JP, Briddon PR, Sque SJ, Jones R. Boron-hydrogen complexes in diamond. Physical Review B 2004, 69, 165215.
- Eberlein TAG, Jones R, Briddon PR. Z1/Z2 defects in 4H-SiC. Physical Review Letters 2003, 90(22), 2255021-2255024.
- Leigh RS, Sangster MJL, Newman RC, Goss JP, Jones R, Torres VJB, Oberg S, Briddon PR. Vibrational modes of sulfur defects in GaP. Physical Review B: Condensed Matter and Materials Physics 2003, 68(3), 333041-333044.
- Leigh RS, Sangster MJL, Newman RC, Goss JP, Jones R, Torres VJB, Oberg S, Briddon PR. Vibrational modes of sulfur defects in GaP. Physical Review B 2003, 68(3), -.
- Goss JP, Hahn I, Jones R, Briddon PR, Oberg S. Vibrational modes and electronic properties of nitrogen defects in silicon. Physical Review B 2003, 67(4), 045206.
- Goss JP, Hahn I, Jones R, Briddon PR, Oberg S. Vibrational modes and electronic properties of nitrogen defects in silicon. Physical Review B: Condensed Matter and Materials Physics 2003, 67(4), 452061-4520611.
- Goss JP, Briddon PR, Jones R, Sque S. The vacancy-nitrogen-hydrogen complex in diamond: A potential deep centre in chemical vapour deposited material. Journal of Physics: Condensed Matter 2003, 15(39), S2903-S2911.
- Zoellner RW, Latham CD, Goss JP, Golden WG, Jones R, Briddon PR. The structures and properties of tetrafluoromethane, hexafluoroethane, and octafluoropropane using the AIMPRO density functional program. Journal of Fluorine Chemistry 2003, 121(2), 193-199.
- Blumenau AT, Fall CJ, Jones R, Oberg S, Frauenheim T, Briddon PR. Structure and motion of basal dislocations in silicon carbide. Physical Review B: Condensed Matter and Materials Physics 2003, 68(17), 1741081-17410814.
- Blumenau AT, Fall CJ, Jones R, Oberg S, Frauenheim T, Briddon PR. Structure and motion of basal dislocations in silicon carbide. Physical Review B 2003, 68(17), 174108.
- El-Barbary AA, Telling RH, Ewels CP, Heggie MI, Briddon PR. Structure and energetics of the vacancy in graphite. Physical Review B 2003, 68(14), 144107.
- El-Barbary AA, Telling RH, Ewels CP, Heggie MI, Briddon PR. Structure and energetics of the vacancy in graphite. Physical Review B 2003, 68(14), 144107.
- Lindefelt U, Iwata H, Oberg S, Briddon PR. Stacking faults in 3C-, 4H-, and 6H-SiC polytypes investigated by an ab initio supercell method. Physical Review B 2003, 67(15), 155204.
- Lindefelt U, Iwata H, Oberg S, Briddon PR. Stacking faults in 3C-, 4H-, and 6H-SiC polytypes investigated by an ab initio supercell method. Physical Review B 2003, 67(15), 155204.
- Markevich VP, Hourahine B, Newman RC, Jones R, Kleverman M, Lindstrom JL, Murin LI, Suezawa M, Oberg S, Briddon PR. Stable hydrogen pair trapped at carbon impurities in silicon. Diffusion and Defect Data. Pt A Defect and Diffusion Forum 2003, 221-223, 1-9.
- Coutinho J, Torres VJB, Jones R, Resende A, Briddon PR. Shallow donor activity of S-H, Se-H, and Te-H complexes in silicon. Physica Status Solidi (B) Basic Research 2003, 235(1), 107-110.
- Hood RQ, Kent PRC, Needs RJ, Briddon PR. Quantum Monte Carlo Study of the Optical and Diffusive Properties of the Vacancy Defect in Diamond. Physical Review Letters 2003, 91(7), 764031-764034.
- Adey J, Jones R, Briddon PR, Goss JP. Optical and electrical activity of boron interstitial defects in Si. Journal of Physics Condensed Matter 2003, 15(39), S2851-S2858.
- Ewels CP, Telling RH, El-Barbary AA, Heggie MI, Briddon PR. Metastable Frenkel pair defect in graphite: Source of wigner energy?. Physical Review Letters 2003, 91(2), 025505/1-025505/4.
- Adey J, Goss JP, Jones R, Briddon PR. Interstitial boron defects in Si. Physica B: Condensed Matter 2003, 340-342, 505-508.
- Adey J, Goss JP, Jones R, Briddon PR. Identification of boron clusters and boron-interstitial clusters in silicon. Physical Review B 2003, 67(24), 245325.
- Adey J, Goss JP, Jones R, Briddon PR. Identification of boron clusters and boron-interstitial clusters in silicon. Physical Review B 2003, 67(24), -.
- Eberlein TAG, Huggett L, Jones R, Briddon PR. Hydrogen molecules in 4H-SiC and 2H-GaN. Journal of Physics: Condensed Matter 2003, 15(39), S2897-S2902.
- Hourahine B, Jones R, Oberg S, Briddon PR, Frauenheim T. Germanium-hydrogen pairs in silicon. Journal of Physics: Condensed Matter 2003, 15(39), S2803-S2807.
- Adey J, Jones R, Briddon PR. Formation of BiOi, BiCs, and BiBsHi defects in e-irradiated or ion-implanted silicon containing boron. Applied Physics Letters 2003, 83(4), 665-667.
- Goss JP, Coomer BJ, Jones R, Fall CJ, Briddon PR, Oberg S. Extended defects in diamond: The interstitial platelet. Physical Review B 2003, 67(16), 165208.
- Goss JP, Coomer BJ, Jones R, Fall CJ, Briddon PR, Oberg S. Extended defects in diamond: The interstitial platelet. Physical Review B 2003, 67(16), 165208.
- Iwata HP, Lindefelt U, Oberg S, Briddon PR. Energies and electronic properties of isolated and interacting twin boundaries in 3C-SiC, Si, and diamond. Physical Review B 2003, 68(11), 113202.
- Coutinho J, Torres VJB, Jones R, Oberg S, Briddon PR. Electronic structure of divacancy-hydrogen complexes in silicon. Journal of Physics: Condensed Matter 2003, 15(39), S2809-S2814.
- Coutinho J, Torres VJB, Jones R, Briddon PR. Electrical activity of chalcogen-hydrogen defects in silicon. Physical Review B 2003, 67(3), 035205.
- Iwata HP, Lindefelt U, Oberg S, Briddon PR. Effective masses of two-dimensional electron gases around cubic inclusions in hexagonal silicon carbide. Physical Review B 2003, 68(24), 245309.
- Coutinho J, Andersen O, Dobaczewski L, Bonde Nielsen K, Peaker AR, Jones R, Oberg S, Briddon PR. Effect of stress on the energy levels of the vacancy-oxygen-hydrogen complex in Si. Physical Review B 2003, 68(18), 184106.
- Coutinho J, Andersen O, Dobaczewski L, Nielsen KB, Peaker AR, Jones R, Oberg S, Briddon PR. Effect of stress on the energy levels of the vacancy-oxygen-hydrogen complex in Si. Physical Review B 2003, 68(18), 184106.
- Goss JP, Briddon PR, Jones R, Teukam Z, Ballutaud D, Jomard F, Chevallier J, Bernard M, Deneuville A. Deep hydrogen traps in heavily B-doped diamond. Physical Review B 2003, 68(23), 235209.
- Goss JP, Briddon PR, Jones R, Teukam Z, Ballutaud D, Jomard F, Chevallier J, Bernard M, Deneuville A. Deep hydrogen traps in heavily B-doped diamond. Physical Review B 2003, 68(23), 235209.
- Iwata H, Lindefelt U, Oberg S, Briddon PR. Cubic polytype inclusions in 4H-SiC. Journal of Applied Physics 2003, 93(3), 1577-1585.
- Latham CD, Nieminen RM, Fall CJ, Jones R, Oberg S, Briddon PR. Calculated properties of point defects in Be-doped GaN. Physical Review B 2003, 67(20), 205206.
- Latham CD, Nieminen RM, Fall CJ, Jones R, Oberg S, Briddon PR. Calculated properties of point defects in Be-doped GaN. Physical Review B 2003, 67(20), 205206.
- Latham CD, Jones R, Oberg S, Nieminen RM, Briddon PR. Calculated properties of nitrogen-vacancy complexes in beryllium- and magnesium-doped GaN. Physical Review B 2003, 68(20), 205209.
- Latham CD, Jones R, Oberg S, Nieminen RM, Briddon PR. Calculated properties of nitrogen-vacancy complexes in beryllium- and magnesium-doped GaN. Physical Review B 2003, 68(20), 205209.
- Iwata HP, Lindefelt U, Oberg S, Briddon PR. Ab initio study of 3 C inclusions and stacking fault-stacking fault interactions in 6H-SiC. Journal of Applied Physics 2003, 94(8), 4972-4979.
- Iwata H, Lindefelt U, Oberg S, Briddon PR. A new type of quantum wells: Stacking faults in silicon carbide. Microelectronics Journal 2003, 34(5-8), 371-374.
- Goss JP, Jones R, Heggie MI, Ewels CP, Briddon PR, Oberg S. Theory of hydrogen in diamond. Physical Review B: Condensed Matter and Materials Physics 2002, 65(11), 115207.
- Goss JP, Jones R, Heggie MI, Ewels CP, Briddon PR, Oberg S. Theory of hydrogen in diamond. Physical Review B 2002, 65(11), 115207.
- Iwata H, Lindefelt U, Oberg S, Briddon PR. Theoretical study of planar defects in silicon carbide. Journal of Physics: Condensed Matter 2002, 14(48), 12733-12740.
- Iwata H, Lindefelt U, Oberg S, Briddon PR. Theoretical study of cubic polytype inclusions in 4H-SiC. Materials Science Forum 2002, 389-393(1), 533-536.
- Iwata H, Lindefeit U, Oberg S, Briddon PR. Theoretical calculation of stacking fault energies in silicon carbide. Materials Science Forum 2002, 389-393(1), 439-442.
- Kaukonen M, Jones R, Oberg S, Briddon PR. Structure of tin-vacancy defects in silicon. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 2002, 186(1-4), 24-29.
- Goss JP, Jones R, Briddon PR. Stress tensors and dilatation of interstitial defects in diamond. Physical Review B 2002, 65(3), -.
- Blumenau AT, Fall CJ, Jones R, Heggie MI, Briddon PR, Frauenheim T, Oberg S. Straight and kinked 90° partial dislocations in diamond and 3C-SiC. Journal of Physics Condensed Matter 2002, 14(48), 12741-12747.
- Jones R, Eberlein TAG, Pinho N, Coomer BJ, Goss JP, Briddon PR, Oberg S. Self-interstitial clusters in silicon. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 2002, 186(1-4), 10-18.
- Goss JP, Eberlein TAG, Jones R, Pinho N, Blumenau AT, Frauenheim T, Briddon PR, Oberg S. Planar interstitial aggregates in Si. Journal of Physics Condensed Matter 2002, 14(48), 12843-12853.
- Iwata H, Lindefelt U, Oberg S, Briddon PR. Localized electronic states around stacking faults in silicon carbide. Physical Review B: Condensed Matter and Materials Physics 2002, 65(3), 033203.
- Iwata H, Lindefelt U, Oberg S, Briddon PR. Localized electronic states around stacking faults in silicon carbide. Physical Review B 2002, 65(3), 033203.
- Coutinho J, Jones R, Briddon PR, Oberg S, Murin LL, Markevich VP, Lindstrom JL. Interstitial carbon-oxygen center and hydrogen related shallow thermal donors in Si. Physical Review B 2002, 65(1), 014109.
- Fall CJ, Jones R, Briddon PR, Blumenau AT, Frauenheim T, Heggie MI. Influence of dislocations on electron energy-loss spectra in gallium nitride. Physical Review B: Condensed Matter and Materials Physics 2002, 65(24), 245304.
- Fall CJ, Jones R, Briddon PR, Blumenau AT, Frauenheim T, Heggie MI. Influence of dislocations on electron energy-loss spectra in gallium nitride. Physical Review B 2002, 65(24), 245304.
- Heggie MI, Ewels CP, Martsinovich N, Scarle S, Jones R, Goss JP, Hourahine B, Briddon PR. Glide dislocations in diamond: First-principles calculations of similarities with and differences from silicon and the effects of hydrogen. Journal of Physics: Condensed Matter 2002, 14(48), 12689-12696.
- Iwata H, Lindefelt U, Oberg S, Briddon PR. Electronic localization around stacking faults in silicon carbide. Materials Science Forum 2002, 389-393(1), 529-532.
- Andersen O, Peaker AR, Dobaczewski L, Nielsen KB, Hourahine B, Jones R, Briddon PR, Oberg S. Electrical activity of carbon-hydrogen centers in Si. Physical Review B: Condensed Matter and Materials Physics 2002, 66(23), 2352051-2352058.
- Andersen O, Peaker AR, Dobaczewski L, Nielsen KB, Hourahine B, Jones R, Briddon PR, Oberg S. Electrical activity of carbon-hydrogen centers in Si. Physical Review B 2002, 66(23), 235205.
- Fall CJ, Blumenau AT, Jones R, Briddon PR, Frauenheim T, Gutierrez-Sosa A, Bangert U, Mora AE, Steeds JW, Butler JE. Dislocations in diamond: Electron energy-loss spectroscopy. Physical Review B 2002, 65(20), 205206.
- Jones R, Fall CJ, Gutierrez-Sosa A, Bangert U, Heggie MI, Blumenau AT, Frauenheim T, Briddon PR. Calculated and experimental low-loss electron energy loss spectra of dislocations in diamond and GaN. Journal of Physics: Condensed Matter 2002, 14(48), 12793-12800.
- Gutierrez-Sosa A, Bangert U, Harvey AJ, Fall CJ, Jones R, Briddon PR, Heggie MI. Band-gap-related energies of threading dislocations and quantum wells in group-III nitride films as derived from electron energy loss spectroscopy. Physical Review B 2002, 66(3), 035302.
- Eberlein TAG, Fall CJ, Jones R, Briddon PR, Oberg S. Alphabet luminescence lines in 4H-SiC. Physical Review B 2002, 65(18), 184108.
- Ewels CP, Heggie MI, Briddon PR. Adatoms and nanoengineering of carbon. Chemical Physics Letters 2002, 351(3-4), 178-182.
- Goss JP, Jones R, Briddon PR. Volume expansion and stress tensors for self-interstitial aggregates in diamond. Physica B: Condensed Matter 2001, 308-310, 604-607.
- Kaukonen M, Jones R, Oberg S, Briddon PR. Tin-vacancy complexes in silicon. Physical Review B 2001, 64(24), 245213.
- Jones R, Coutinho J, Oberg S, Briddon PR. Thermal double donors in Si and Ge. Physica B: Condensed Matter 2001, 308-310, 8-12.
- Coutinho J, Jones R, Murin LI, Markevich VP, Lindstrom JL, Oberg S, Briddon PR. Thermal double donors and quantum dots. Physical Review Letters 2001, 8723(23), 235501.
- Cusack MA, Briddon PR, North SM, Kitchin MR, Jaros M. Si/Ge self-assembled quantum dots for infrared applications. Semiconductor Science and Technology 2001, 16(11), L81-L84.
- Eberlein TAG, Pinho N, Jones R, Coomer BJ, Goss JP, Briddon PR, Oberg S. Self-interstitial clusters in silicon. Physica B: Condensed Matter 2001, 308-310, 454-457.
- Goss JP, Coomer BJ, Jones R, Shaw TD, Briddon PR, Rayson MJ. Self-interstitial aggregation in diamond. Physical Review B 2001, 63(19), 195208.
- Goss JP, Hourahine B, Jones R, Heggie MI, Briddon PR. p-type surface doping of diamond: A first-principles study. Journal of Physics Condensed Matter 2001, 13(40), 8973-8978.
- Andersen O, Dobaczewski L, Peaker AR, Bonde Nielsen K, Hourahine B, Jones R, Briddon PR, Oberg S. Piezospectroscopic analysis of the hydrogen-carbon complexes in silicon. Physica B: Condensed Matter 2001, 308-310, 139-142.
- Coutinho J, Jones R, Briddon PR, Oberg S, Murin LI, Markevich VP, Lindstrom JL. Over-coordinated oxygen in the interstitial carbon-oxygen complex. Physica B: Condensed Matter 2001, 308-310, 305-308.
- Fall CJ, Goss JPG, Jones R, Briddon PR, Blumenau AT, Frauenheim T. Modelling electron energy-loss spectra of dislocations in silicon and diamond. Physica B: Condensed Matter 2001, 308-310, 577-580.
- Pinho NMC, Torres VJB, Jones R, Briddon PR, Oberg S. Mg-H and Be-H complexes in cubic boron nitride. Journal of Physics Condensed Matter 2001, 13(40), 8951-8956.
- Pinho NMC, Torres VB, Jones R, Oberg S, Briddon PR. Mg-H and Be-H complexes in c-BN. Physica B: Condensed Matter 2001, 308-310, 1027-1030.
- Pajot B, Fall CJ, Cantin JL, Von Bardeleben HJ, Jones R, Briddon PR, Gendron F. Low-frequency vibrational spectroscopy in SiC polytypes. Materials Science Forum 2001, 353-356, 349-352.
- Murin LI, Lindstrom JL, Markevich VP, Hallberg T, Litvinov VV, Coutinho J, Jones R, Briddon PR, Oberg S. Isotopic effects on vibrational modes of thermal double donors in Si and Ge. Physica B: Condensed Matter 2001, 308-310, 290-293.
- Goss JP, Coomer BJ, Jones R, Shaw TD, Briddon PR, Oberg S. Interstitial aggregates in diamond. Diamond and Related Materials 2001, 10(3-7), 434-438.
- Coomer BJ, Goss JP, Jones R, Oberg S, Briddon PR. Identification of the tetra-interstitial in silicon. Journal of Physics Condensed Matter 2001, 13(1), L1-L7.
- Ewels CP, Wilson NT, Heggie MI, Jones R, Briddon PR. Graphitization at diamond dislocation cores. Journal of Physics Condensed Matter 2001, 13(40), 8965-8972.
- Goss JP, Jones R, Shaw TD, Rayson MJ, Briddon PR. First Principles Study of the Self-Interstitial Defect in Diamond. Physica Status Solidi (A) 2001, 186(2), 215-220.
- Goss JP, Jones R, Heggie MI, Ewels CP, Briddon PR, Oberg S. First Principles Studies of H in Diamond. Physica Status Solidi (A) Applied Research 2001, 186(2), 263-268.
- Hourahine B, Jones R, Oberg S, Briddon PR, Markevich VP, Newman RC, Hermansson J, Kleverman M, Lindstrom JL, Murin LI, Fukata N, Suezawa M. Evidence for H*2 trapped by carbon impurities in silicon. Physica B: Condensed Matter 2001, 308-310, 197-201.
- Fall CJ, Jones R, Briddon PR, Oberg S. Electronic and vibrational properties of Mg- and O-related complexes in GaN. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 2001, 82(1-3), 88-90.
- Blumenau AT, Jones R, Oberg S, Briddon PR, Frauenheim T. Dislocation related photoluminescence in silicon. Physical Review Letters 2001, 87(18), 1874041-1874044.
- Latham CD, Jones R, Oberg S, Briddon PR. Density-functional calculations of carbon doping in III-V compound semiconductors. Physical Review B (Condensed Matter and Materials Physics) 2001, 63(15), 155202(1)-155202(7).
- Latham CD, Jones R, Oberg S, Briddon PR. Density-functional calculations of carbon doping in III-V compound semiconductors. Physical Review B - Condensed Matter 2001, 63(15), ARTN 155202.
- Lavrov EV, Fanciulli M, Kaukonen M, Jones R, Briddon PR. Carbon-tin defects in silicon. PHYSICAL REVIEW B 2001, 6412(12), 125212(1-5).
- Lavrov EV, Hoffmann L, Bech Nielsen B, Hourahine B, Jones R, Oberg S, Briddon PR. Weakly bound carbon-hydrogen complex in silicon. Physical Review B 2000, 61(24), 16659-16666.
- Larsen AN, Goubet JJ, Mejlholm P, Christensen JS, Fanciulli M, Gunnlaugsson HP, Weyer G, Petersen JW, Resende A, Kaukonen M, Jones R, Oberg S, Briddon PR, Svensson BG, Lindstrom JL, Dannefaer S. Tin-vacancy acceptor levels in electron-irradiated n-type silicon. Physical Review B: Condensed Matter and Materials Physics 2000, 62(7), 4535-4544.
- Heggie MI, Jenkins S, Ewels CP, Jemmer P, Jones R, Briddon PR. Theory of dislocations in diamond and silicon and their interaction with hydrogen. Journal of Physics: Condensed Matter 2000, 12(49), 10263-10270.
- Goss JP, Coomer BJ, Jones R, Fall CJ, Latham CD, Briddon PR, Oberg S. Small aggregates of interstitials and models for platelets in diamond. Journal of Physics Condensed Matter 2000, 12(49), 10257-10261.
- Gali A, Deak P, Briddon PR, Devaty RP, Choyke WJ. Phosphorus-related deep donor in SiC. Physical Review B - Condensed Matter and Materials Physics 2000, 61(19), 12602-12604.
- Gali A, Deak P, Briddon PR, Devaty RP, Choyke WJ. Phosphorus-related deep donor in SiC. Physical Review B 2000, 61(19), 12602-12604.
- Briddon PR, Coutinho J, Jones R, Öberg S. Oxygen and dioxygen centers in Si and Ge: Density-functional calculations. Physical Review B: Condensed Matter and Materials Physics 2000, 62(16), 10824-10840.
- Coutinho J, Jones R, Briddon PR, Oberg S. Oxygen and dioxygen centers in Si and Ge: Density-functional calculations. Physical Review B 2000, 62(16), 10824-10840.
- Blumenau AT, Jones R, Oberg S, Frauenheim T, Briddon PR. Optical bands related to dislocations in Si. Journal of Physics Condensed Matter 2000, 12(49), 10123-10129.
- Markevich VP, Murin LI, Suezawa M, Lindstrom JL, Coutinho J, Jones R, Briddon PR, Oberg S. Observation and theory of the V-O-H-2 complex in silicon. Physical Review B 2000, 61(19), 12964-12969.
- Markevich VP, Murin LI, Suezawa M, Lindstrom JL, Coutinho J, Jones R, Briddon PR, Oberg S. Observation and theory of the V-O-H2 complex in silicon. Physical Review B - Condensed Matter and Materials Physics 2000, 61(19), 12964-12969.
- Leary P, Ewels CP, Heggie MI, Jones R, Briddon PR. Modelling carbon for industry: Radiolytic oxidation. Physica Status Solidi (B) Basic Research 2000, 217(1), 429-447.
- Lavrov EV, Bech Nielsen B, Byberg JR, Hourahine B, Jones R, Oberg S, Briddon PR. Local vibrational modes of two neighboring substitutional carbon atoms in silicon. Physical Review B - Condensed Matter and Materials Physics 2000, 62(1), 158-165.
- Lavrov EV, Nielsen BB, Byberg JR, Hourahine B, Jones R, Oberg S, Briddon PR. Local vibrational modes of two neighboring substitutional carbon atoms in silicon. Physical Review B 2000, 62(1), 158-165.
- Briddon PR, Jones R. LDA calculations using a basis of Gaussian orbitals. Physica Status Solidi (B) Basic Research 2000, 217(1), 131-171.
- Jones R, Coomer BJ, Goss JP, Oberg S, Briddon PR. Intrinsic defects and the D1 to D4 optical bands detected in plastically deformed Si. Physica Status Solidi (B) Basic Research 2000, 222(1), 133-140.
- Hourahine B, Jones R, Safonov AN, Oberg S, Briddon PR, Estreicher SK. Identification of the hexavacancy in silicon with the B804 optical center. Physical Review B - Condensed Matter and Materials Physics 2000, 61(19), 12594-12597.
- Hourahine B, Jones R, Safonov AN, Oberg S, Briddon PR, Estreicher SK. Identification of the hexavacancy in silicon with the B-80(4) optical center. Physical Review B 2000, 61(19), 12594-12597.
- Ewels CP, Leoni S, Heggie MI, Jemmer P, Hernandez E, Jones R, Briddon PR. Hydrogen Interaction with Dislocations in Si. Physical Review Letters 2000, 84(4), 690-693.
- Blumenau AT, Elsner J, Jones R, Heggie MI, Oberg S, Frauenheim T, Briddon PR. Dislocations in hexagonal and cubic GaN. Journal of Physics Condensed Matter 2000, 12(49), 10223-10233.
- Lavrov EV, Hoffmann L, Bech Nielsen B, Hourahine B, Jones R, Oberg S, Briddon PR. Combined infrared absorption and modeling study of a dicarbon-dihydrogen defect in silicon. Physical Review B - Condensed Matter and Materials Physics 2000, 62(19), 12859-12867.
- Lavrov EV, Briddon PR, Nielsen BB, Hourahine B, Jones R, Oberg S. Combined infrared absorption and modeling study of a dicarbon-dihydrogen defect in silicon. Physical Review B: Condensed Matter and Materials Physics 2000, 62(19), 12859-12867.
- Gutierrez R, Haugk M, Frauenheim Th, Elsner J, Jones R, Heggie MI, Oberg S, Briddon PR. The formation of nanopipes caused by donor impurities in GaN: A theoretical study for the case of oxygen. Philosophical Magazine Letters 1999, 79(3), 147-152.
- Coomer BJ, Resende A, Goss JP, Jones R, Oberg S, Briddon PR. The divacancy in silicon and diamond. Physica B: Condensed Matter 1999, 273-274, 520-523.
- Hoffmann L, Bech Nielsen B, Nylandsted Larsen A, Leary P, Jones R, Briddon PR, Oberg S. Substitutional carbon in Si1-xGex. Physical Review B - Condensed Matter and Materials Physics 1999, 60(19), 13573-13581.
- Hoffmann L, Nielsen BB, Larsen AN, Leary P, Jones R, Briddon PR, Oberg S. Substitutional carbon in Si1-xGex. Physical Review B 1999, 60(19), 13573-13581.
- Hourahine B, Jones R, Oberg S, Briddon PR. Self-interstitial-hydrogen complexes in silicon. Physical Review B - Condensed Matter and Materials Physics 1999, 59(24), 15729-15732.
- Hourahine B, Jones R, Oberg S, Briddon PR. Self-interstitial-hydrogen complexes in silicon. Physical Review B 1999, 59(24), 15729-15732.
- Davidson BR, Newman RC, Latham CD, Jones R, Wagner J, Button CC, Briddon PR. Raman scattering observations and ab initio models of dicarbon complexes in AlAs. Physical Review B - Condensed Matter and Materials Physics 1999, 60(8), 5447-5455.
- Davidson BR, Newman RC, Latham CD, Jones R, Wagner J, Button CC, Briddon PR. Raman scattering observations and ab initio models of dicarbon complexes in AlAs. Physical Review B 1999, 60(8), 5447-5455.
- Brady AC, Hodder B, Martin AS, Sambles JR, Ewels CP, Jones R, Briddon PR, Musa AM, Panetta CA, Mattern DL. Molecular rectification with M|(D-σ-A LB film)|M junctions. Journal of Materials Chemistry 1999, 9(9), 2271-2275.
- Brady AC, Hodder B, Martin AS, Sambles JR, Ewels CP, Jones R, Briddon PR, Musa AM, Panetta CAF, Mattern DL. Molecular rectification with M vertical bar(D-sigma-A LB film)vertical bar M junctions. Journal of Materials Chemistry 1999, 9(9), 2271-2275.
- Hourahine B, Jones R, Oberg S, Briddon PR. Molecular hydrogen traps within silicon. Materials Science and Engineering B: Solid-State Materials for Advanced Technology 1999, 58(1), 24-25.
- Coomer BJ, Goss JP, Jones R, Oberg S, Briddon PR. Interstitial aggregates and a new model for the I1/W optical centre in silicon. Physica B: Condensed Matter 1999, 273-274, 505-508.
- Latham CD, Haugk M, Jones R, Frauenheim Th, Briddon PR. Density-functional calculations of carbon diffusion in GaAs. Physical Review B - Condensed Matter and Materials Physics 1999, 60(22), 15117-15122.
- Latham CD, Haugk M, Jones R, Frauenheim T, Briddon PR. Density-functional calculations of carbon diffusion in GaAs. Physical Review B 1999, 60(22), 15117-15122.
- Resende A, Jones R, Oberg S, Briddon PR. Calculations of Electrical Levels of Deep Centers: Application to Au-H and Ag-H Defects in Silicon. Physical Review Letters 1999, 82(10), 2111-2114.
- Goss JP, Jones R, Breuer SJ, Briddon PR, Oberg S. The twelve-line 1.682 eV luminescence center in diamond and the vacancy-silicon complex. Physical Review Letters 1996, 77(14), 3041-3044.
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Book Chapters
- Goss JP, Eyre RJ, Briddon PR. Theoretical models for doping diamond for semiconductor applications. In: Koizumi S; Nebel CE; Nesladek M, ed. Physics and applications of CVD diamond. Weinheim: Wiley-VCH, 2008, pp.199-236.
- Martsinovich N, Rosa AL, Heggie MI, Briddon PR. First principles calculations of hydrogen aggregation in silicon. In: Defects and Diffusion in Semiconductors: An Annual Retrospective VII. Trans Tech Publications, 2004, pp.81-91.
- Markevich VP, Hourahine B, Newman RC, Jones R, Kleverman M, Lindstrom JL, Murin LI, Suezawa M, Oberg S, Briddon PR. Stable hydrogen pair trapped at carbon impurities in silicon. In: Fisher, D.J, ed. Defects and Diffusion in Semiconductors: An Annual Retrospective VII. Zurich, Switzerland: Trans Tech Publications Ltd, 2003, pp.1-9.
- Jones R, Briddon P. The Ab Initio Cluster Method and the Dynamics of Defects in Semiconductors. In: Michael Stavola, ed. Identification of Defects in Semiconductors. London: Academic Press, 1998, pp.287-349.
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Conference Proceedings (inc. Abstracts)
- Al-hadidi M, Goss JP, Al-hamadany R, Briddon PR, Rayson MJ. Ab initio calculations of carbon impurities in ferroelectric lead titanate. In: International Conference for Students on Applied Engineering (ICSAE). 2017, Newcastle, UK: IEEE.
- Al-Hadidi MS, Goss JP, Briddon PR, Al-Hamadany RA, Ahmed ME, Rayson MJ. Density functional simulation of carbon at the titanium site in perovskite barium titanate. In: 12TH EUROPHYSICAL 12th Europhysical Conference on Defects in Insulating Materials (EURODIM 2014). 2015, Canterbury, UK: IOP Publishing.
- Tiwari AK, Goss JP, Briddon PR, Wright NG, Horsfall AB, Rayson MJ. Ultra thin transition metal oxide coatings on diamond for thermionic applications. In: MRS Fall Meeting & Exhibit. 2013, Boston, Massachusetts: Cambridge University Press.
- Tiwari AK, Goss JP, Briddon PR, Wright NG, Horsfall AB, Rayson MJ. Transition metal oxide-diamond interfaces for electron emission applications. In: 9th European Conference on Silicon Carbide and Related Materials. 2013, St. Petersburg, Russian Federation: Trans Tech Publications, Inc.
- Markevich VP, Peaker AR, Hamilton B, Lastovskii SB, Murin LI, Coutinho J, Markevich AV, Rayson MJ, Briddon PR, Svensson BG. Reconfigurations and diffusion of trivacancy in silicon. In: 26th International Conference on Defects in Semiconductors (ICDS). 2012, Nelson, New Zealand: Elsevier BV.
- Tiwari AK, Goss JP, Briddon P, Wright NG, Horsfall AB. Density functional simulations of transition metal terminated (001)-diamond surfaces. In: 14th International Conference on Silicon Carbide and Related Materials (ICSCRM). 2012, Cleveland, Ohio, USA: Trans Tech Publications Ltd.
- Goss JP, Briddon PR, Nagareddy VK, Wright NG, Horsfall AB, Caldwell JD, Gaskill DK, Jernigan GG. Influence of intercalated silicon on the transport properties of graphene. In: Materials Science Forum: 8th European Conference on Silicon Carbide and Related Materials. 2011, Oslo, Norway: Trans Tech Publications Ltd.
- Ahmed M, Goss J, Eyre R, Briddon P, Taylforth M. Theoretical investigation on optical characteristics of functionalization silicon quantum dots. In: Nanotechnology: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - Technical Proceedings of the 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech. 2010, Anaheim, California, USA: CRC Press.
- Ahmed ME, Goss JP, Eyre RJ, Briddon PR, Taylforth MA. Theoretical investigation on optical characteristics of functionalised silicon quantum dots. In: Nanotech. 2010, Anaheim, California, USA: NSTI.
- Coutinho J, Castro F, Torres VJB, Carvalho A, Barroso M, Briddon PR. Electronic structural details of donor-vacancy complexes in Si-doped Ge and Ge-doped Si. In: Symposium on Silicon and Germanium Issues for Future CMOS Devices. 2010, Strasbourg, France: Thin Solid Films: Elsevier SA.
- Goss J, Briddon P, Wright N, Horsfall A. Density functional simulations of physisorbed and chemisorbed single graphene layers on 4H-SiC (0001), (0001̄) and 4H-SiC:H surface. In: Materials Science Forum: Silicon Carbide and Related Materials 2009. 2010, Nürnberg, Germany: Trans Tech Publications Ltd.
- Goss JP, Briddon PR, Wright NG, Horsfall AB. Density Functional Simulations of Physisorbed and Chemisorbed Single Graphene Layers on 4H-SiC (0001), (000(1)over-bar) and 4H-SiC:H surface. In: 13th International Conference on Silicon Carbide and Related Materials (ICSCRM 2009). 2010, Nurnberg, Germany: Materials Science Forum: Trans Tech Publications Ltd.
- Ahmed ME, Goss JP, Eyre RJ, Briddon PR, Taylforth MA. Ab Initio Study of functionalized 1 nm Silicon Nanoparticles. In: Journal of Physics: Conference Series. 2010, Nottingham, UK: IOP Publishing Ltd.
- Ahmed ME, Goss JP, Eyre RJ, Briddon PR, Taylforth MA. Ab Initio study of functionalized 1 nm silicon nanoparticles. In: Journal of Physics: Conference Series, Quantum Dot. 2010, Notthingham, UK: Institute of Physics Publishing Ltd.
- Markevich V, Peaker A, Lastovskii S, Murin L, Coutinho J, Markevich A, Torres V, Briddon P, Dobaczewski L, Monakhov E, Svensson B. Trivacancy in silicon: A combined DLTS and ab-initio modeling study. In: 25th International Conference on Defects in Semiconductors. 2009, Saint Petersburg, Russia: Physica B: Condensed Matter: Elsevier BV.
- Fujita N, Jones R, Oberg S, Briddon PR. Large spherical vacancy clusters in diamond - Origin of the brown colouration?. In: 19th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Garbide. 2009, Sitges, Spain: Diamond and Related Materials: Elsevier SA.
- Carvalho A, Tagantsev A, Oberg S, Briddon P, Setter N. Intrinsic defects in CdTe and CdZnTe alloys. In: 25th International Conference on Defects in Semiconductors. 2009, Saint Petersburg, Russia: Physica B: Condensed Matter: Elsevier BV.
- Carvalho A, Coutinho J, Jones R, Silva E, Oberg S, Briddon PR. Density-functional theory study of Au, Ag and Cu defects in germanium. In: Materials Science in Semiconductor Processing: International Symposium on Beyond Silicon Technology. 2009, Strasbourg, France: Pergamon.
- Khirunenko LI, Pomozov YV, Sosnin M, Markevich VP, Murin LI, Litvinov VV, Carvalho A, Jones R, Coutinho J, Oberg S, Briddon PR. Complexes of self-interstitials with oxygen atoms in germanium. In: Materials Science in Semiconductor Processing: International Symposium on Beyond Silicon Technology. 2009, Strasbourg, France: Pergamon.
- Janke C, Jones R, Coutinho J, Oberg S, Briddon PR. Ab initio investigation of phosphorus and boron diffusion in germanium. In: Materials Science in Semiconductor Processing: International Symposium on Beyond Silicon Technology. 2009, Strasbourg, France: Pergamon.
- Fujita N, Jones R, Eberlein TAG, Oberg S, Briddon PR. Theoretical aspects on the formation of the tri-interstitial nitrogen defect in silicon. In: Diffusion and Defect Data Pt.B: Solid State Phenomena. 12th International Autumn Meeting: Gettering and Defect Engineering in Semiconductor Technology, GADEST 2007. 2008, Erice, Sicily: Materials Science and Engineering.
- Carvalho A, Jones R, Janke C, Oberg S, Briddon PR. Primary defects in n-type irradiated germanium: A first-principles investigation. In: Diffusion and Defect Data Pt.B: Solid State Phenomena. 12th International Autumn Meeting: Gettering and Defect Engineering in Semiconductor Technology, GADEST. 2008, Erice, Sicily: Materials Science and Engineering.
- Coutinho J, Janke C, Carvalho A, Oberg S, Torres VJB, Jones R, Briddon PR. Limits to n-type doping in Ge: Formation of donor-vacancy complexes. In: Defect and Diffusion Forum: Diffusion in Solids and Liquids III. 2008, Algarve, Portugal: Trans Tech Publications Ltd.
- Khirunenko LI, Pomozov YuV, Sosnin MG, Duvanskii A, Torres VJB, Coutinho J, Jones R, Briddon PR, Abrosimov NV, Riemann H. Interstitial carbon-related defects in Si1-xGex alloys. In: Diffusion and Defect Data Pt.B: Solid State Phenomena. 12th International Autumn Meeting: Gettering and Defect Engineering in Semiconductor Technology, GADEST. 2008, Erice, Sicily: Materials Science and Engineering.
- Carvalho A, Coutinho J, Jones R, Barroso M, Goss JP, Briddon PR. Density-functional theory study of interstitial iron and its complexes with B and Al in dilute SiGe alloys. In: E-MRS 2008 Spring Conference Symposium J: Beyond Silicon Technology: Materials and Devices for Post-Si CMOS. 2008, Strasbourg, France: Materials Science in Semiconductor Processing: Pergamon.
- Fujita N, Jones R, Oberg S, Briddon PR, Blumenau AT. A theoretical study of copper contaminated dislocations in silicon. In: Diffusion and Defect Data Pt.B: Solid State Phenomena. 12th International Autumn Meeting: Gettering and Defect Engineering in Semiconductor Technology, GADEST. 2008, Erice, Sicily: Materials Science and Engineering.
- Goss JP, Eyre RJ, Briddon PR. Transfer doping of diamond via 2,3-dichloro-5,6-dicyano-1,4-benzoquinone (DDQ). In: Physica Status Solidi A: Applications and Materials Science. International Hasselt Diamond Workshop. 2007, Diepenbeek-Hasselt, Belgium: Wiley - V C H Verlag GmbH & Co. KGaA.
- Sque SJ, Jones R, Briddon PR. The transfer doping of graphite and graphene. In: 12th Hasselt Diamond Workshop 2007 (SBDD XII). 2007, Hasselt University, Diepenbeek-Hasselt, Belgium: Physica Status Solidi (A) Applications and Materials, Wiley-Blackwell.
- Hounsome LS, Jones R, Martineau PM, Fisher D, Shaw MJ, Briddon PR, Oberg S. Role of extended defects in brown colouration of diamond. In: Physica Status Solidi C: Current Topics in Solid State Physics. International Conference on Extended Defects in Semiconductors (EDS). 2007, Halle, Germany: Wiley-Blackwell.
- Eberlein TAG, Jones R, Blumenau AT, Oberg S, Briddon PR. Movement and pinning of dislocations in SiC. In: International Conference on Extended Defects in Semiconductors (EDS 2006). 2007, Halle, Germany: Physica Status Solidi C: Current Topics in Solid State Physics, Wiley-Blackwell.
- Sque SJ, Ewels CP, Jones R, Briddon PR. Modelling the effect of doping metallic carbon nanotubes on their ability to transfer-dope diamond. In: Physica Status Solidi (A) Applications and Materials: International Hasselt Diamond Workshop. 2007, Diepenbeek-Hasselt, Belgium: Wiley-Blackwell.
- Jones R, Hounsome LS, Fujita N, Oberg S, Briddon PR. Electrical and optical properties of multivacancy centres in diamond. In: Physica Status Solidi (A) Applications and Materials: International Hasselt Diamond Workshop. 2007, Diepenbeek-Hasselt, Belgium: Wiley-Blackwell.
- Goss JP, Eyre RJ, Briddon PR. A theoretical study of Li as n-type dopants for diamond: The role of aggregation. In: 12th Hasselt Diamond Workshop 2007 (SBDD XII). 2007, Hasselt University, Diepenbeek-Hasselt, Belgium: Physica Status Solidi (A) Applications and Materials, Wiley-Blackwell.
- Khirunenko LI, Pomozov YuV, Sosnin MG, Trypachko MO, Torres VJB, Coutinho J, Jones R, Briddon PR, Abrosimov NV, Riemann H. Vacancy-dioxygen centers in Si-rich SiGe alloys. In: European MRS 2006 Spring Meeting. 2006, Nice, France: Materials Science in Semiconductor Processing: Pergamon.
- Wardle MG, Goss JP, Briddon PR. Transition-metal and hydrogen in ZnO: A source of shallow donors. In: 23rd International Conference on Defects in Semiconductors. 2006, Awaji Isl, Japan: Physica B: Condensed Matter, Elsevier BV.
- Sque SJ, Jones R, Oberg S, Briddon PR. Transfer doping of diamond: The use of C60 and C60 F36 to effect p-type surface conductivity. In: Physica B: Condensed Matter, 23rd International Conference on Defects in Semiconductors. 2006, Awaji Isl, Japan: Elsevier BV.
- Goss JP, Briddon PR, Wardle MG. Theory of Mn-H co-doping for GaAs and related magnetic semiconductors. In: 23rd International Conference on Defects in Semiconductors. 2006, Awaji Isl, Japan: Physica B: Condensed Matter, Elsevier.
- Coutinho J, Torres VJB, Pereira RN, Nielsen BB, Jones R, Briddon PR. Theory of anharmonicity on bond-centered hydrogen oscillators in silicon. In: Physica B: Condensed Matter, 23rd International Conference on Defects in Semiconductors. 2006, Awaji Isl, Japan: Elsevier BV.
- Sque SJ, Jones R, Oberg S, Briddon PR. Theoretical study on the adsorption of armchair carbon nanotubes on the hydrogenated surface of diamond. In: 11th International Workshop on Surface and Bulk Defects in CVD Diamond Films. 2006, Diepenbeek, Belgium: Physica Status Solidi A: Applications and Materials, Wiley-Blackwell.
- Fujita N, Blumenau AT, Jones R, Oberg S, Briddon PR. Theoretical studies on 〈100〉 dislocations in single crystal CVD diamond. In: 11th International Workshop on Surface and Bulk Defects in CVD Diamond Films. 2006, Diepenbeek, Belgium: Physica Status Solidi A: Applications and Materials, Wiley-Blackwell.
- Janke C, Jones R, Coutinho J, Oberg S, Briddon PR. Supercell and cluster density functional calculations of the thermal stability of the divacancy in germanium. In: E-MRS 2006 Spring Meeting. 2006, Nice, France: Materials Science in Semiconductor Processing: Pergamon.
- Carvalho A, Jones R, Coutinho J, Shaw M, Torres VJB, Oberg S, Briddon PR. Studies of the VO centre in Ge using first principles cluster calculations. In: E-MRS 2006 Spring Meeting. 2006, Nice, France: Materials Science in Semiconductor Processing: Pergamon.
- Hounsome LS, Jones R, Shaw MJ, Briddon PR. Photoelastic constants in diamond and silicon. In: Physica Status Solidi (A) Applications and Materials: 11th International Workshop on Surface and Bulk Defects in CVD Diamond Films. 2006, Hasselt Univ, Diepenbeek, Belgium: Wiley - V C H Verlag GmbH & Co. KGaA.
- Khirunenko L, Pomozov Yu, Sosnin M, Torres VJB, Coutinho J, Jones R, Abrosimov NV, Riemann H, Briddon PR. Local vibrations of substitutional carbon in SiGe alloys. In: Advanced Materials Forum III: 3rd International Materials Symposium. 2006, Aveiro, Portugal: Trans Tech Publications.
- Khirunenko LI, Pomozov YuV, Sosnin MG, Trypachko MO, Duvanskii A, Torres VJB, Coutinho J, Jones R, Briddon PR, Abrosimov NV, Riemann H. Local vibrations of interstitial carbon in SiGe alloys. In: E-MRS 2006 Spring Meeting. 2006, Nice, France: Materials Science in Semiconductor Processing: Pergamon.
- Hourahine B, Jones R, Briddon PR. Hydrogen molecules and platelets in germanium. In: Physica B: Condensed Matter. 23rd International Conference on Defects in Semiconductors. 2006, Awaji Isl, Japan: Elsevier BV.
- Pinto HM, Coutinho J, Torres VJB, Oberg S, Briddon PR. Formation energy and migration barrier of a Ge vacancy from ab initio studies. In: E-MRS 2006 Spring Meeting. 2006, Nice, France: Materials Science in Semiconductor Processing: Pergamon.
- Fujita N, Jones R, Oberg S, Briddon PR. First-principle study on the identification of nitrogen-oxygen defect complexes in silicon. In: ECS Transactions: 210th ECS Meeting. 2006, Cancun, Mexico: Electrochemical Society, Inc.
- Almeida LM, Coutinho J, Torres VJB, Jones R, Briddon PR. Energy levels of atomic hydrogen in germanium from ab-initio calculations. In: E-MRS 2006 Spring Meeting. 2006, Nice, France: Materials Science in Semiconductor Processing: Elsevier.
- Latham CD, Ganchenkova M, Nieminen RM, Nicolaysen S, Alatalo M, Oberg S, Briddon PR. Electronic structure calculations for substitutional copper and monovacancies in silicon. In: Physica Scripta T: 21sth Nordic Semiconductor Meeting. 2006, Sundvolden, Norway: Institute of Physics Publishing Ltd.
- Torres VJB, Coutinho J, Jones R, Barroso M, Oberg S, Briddon PR. Early SiO2 precipitates in Si: Vacancy-oxygen versus interstitial-oxygen clusters. In: Physica B: Condensed Matter. 23rd International Conference on Defects in Semiconductors. 2006, Awaji Isl, Japan: Elsevier BV.
- Alberto P, Torres VJB, Coutinho J, Briddon PR. Ab-initio modeling of acceptor-hydrogen complexes in CdTe. In: Physica B: Condensed Matter. 23rd International Conference on Defects in Semiconductors. 2006, Awaji Isl, Japan: Elsevier BV.
- Coutinho J, Torres VJB, Carvalho A, Jones R, Oberg S, Briddon PR. Ab initio modeling of defect levels in Ge clusters and supercells. In: E-MRS 2006 Spring Meeting. 2006, Nice, France: Materials Science in Semiconductor Processing: Pergamon.
- Jones R, Carvalho A, Coutinho J, Torres VJB, Oberg S, Briddon PR. Theoretical investigations of the energy levels of defects in germanium. In: Diffusion and Defect Data Pt.B: Solid State Phenomena. 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy. 2005, Giens, France: Scitec Publications Ltd.
- Jones R, Carvalho A, Coutinho J, Torres VJB, Oberg S, Briddon PR. Theoretical investigations of the energy levels of defects in germanium. In: Gettering and defect engineering in semiconductor technology XI. 2005, Giens, France: Uetikon-Zuerich.
- Fujita N, Jones R, Goss JP, Frauenheim T, Oberg S, Briddon PR. Theoretical investigations of the diffusion of Nitrogen-pair defects in Silicon. In: Diffusion and Defect Data Pt.B: Solid State Phenomena. 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy. 2005, Giens, France: Scitec Publications Ltd.
- Fujita N, Jones R, Goss JP, Frauenheim T, Oberg S, Briddon PR. Theoretical investigations of the diffusion of nitrogen-pair defects in silicon. In: Gettering and Defect Engineering in Semiconductor Technology XI. 2005, Giens, France: Uetikon-Zuerich.
- Blumenau AT, Eberlein TAG, Jones R, Oberg S, Frauenheim T, Briddon PR. The effect of charge on kink migration at 90 degrees partial dislocations in SiC. In: Physica Status Solidi. A: Applications and Materials Science. International Workshop on Nitrides Semiconductors (IWN). 2005, Pittsburgh, Pennsylvania, USA: Wiley - VCH Verlag GmbH & Co. KGaA.
- Goss JP, Briddon PR, Sachdeva R, Jones R, Sque SJ. Quantum mechanical modeling of the structure and doping properties of defects in diamond. In: Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors. 2005, Flagstaff, Arizona: AIP.
- Goss JP, Briddon PR, Sachdeva R, Jones R, Sque SJ. Quantum mechanical modeling of the structure and doping properties of defects in diamond. In: 27th International Conference on the Physics of Semiconductors (ICPS). 2005, Flagstaff, Arizona, USA: American Institute of Physics.
- Murin LI, Lindstrom JL, Markevich VP, Medvedeva IF, Torres VJB, Coutinho J, Jones R, Briddon PR. Metastable VO2 complexes in silicon: Experimental and theoretical modeling studies. In: Gettering and Defect Engineering in Semiconductor Technology XI: Gadest, Proceedings of the 11th International Autumn Meeting. 2005, Giens, France: Trans Tech Publications Ltd.
- Murin LI, Lindstrom J, Markevich VP, Medvedeva IF, Torres VJB, Coutinho J, Jones R, Briddon PR. Metastable VO2 complexes in silicon: experimental and theoretical modeling studies. In: Gettering and Defect Engineering in Semiconductor Technology XI: Proceedings of the 11th International Autumn Meeting. 2005, Giens, France: Trans Tech Publications Ltd.
- Coutinho J, Torres VJB, Pereira RN, Jones R, Oberg S, Briddon PR. Local vibrations on hydrogen dimers in dilute SiGe crystalline solutions. In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. Symposium on Materials Science and Device Issues for Futrue Si-Based Technologies. 2005, Strasbourg, France: Elsevier SA.
- Sque SJ, Jones R, Briddon PR. Hydrogenation and oxygenation of the (100) diamond surface and the consequences for transfer doping. In: 10th International Workshop on Surface and Bulk Defects in CVD Diamond Films. 2005, Diepenbee-Hasselt, Belgium: Physica Status Solidi (A) Applications and Materials.
- Eberlein TAG, Jones R, Briddon PR, Oberg S. Grown-in and radiation-induced defects in 4H-SiC. In: Semiconductor Defect Engineering: Materials, Synthetic Structures and Devices. 2005, San Francisco, California, USA: Materials Research Society.
- Markevich VP, Murin LI, Lastovskii SB, Medvedeva IF, Lindstrom JL, Peaker AR, Coutinho J, Jones R, Torres VJB, Oberg S, Briddon PR. Electronic properties and structure of a complex incorporating a self-interstitial and two oxygen atoms in silicon. In: Diffusion and Defect Data Pt.B: Solid State Phenomena. 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy (GADEST). 2005, Giens, France: Scitec Publications Ltd.
- Carvalho A, Jones R, Coutinho J, Torres VJB, Briddon PR. Ab-initio studies of local vibrations of small self-interstitial aggregates in silicon. In: 11th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technlogy, GADEST 2005. 2005, Giens, France.
- Carvalho A, Jones R, Coutinho J, Torres VJB, Briddon PR. Ab-initio studies of local vibrations of small self-interstitial aggregates in silicon. In: Gettering and Defect Engineering in Semiconductor Technology XI: Proceedings of the 11th International Autumn Meeting. 2005, Giens, France: Trans Tech Publications Ltd.
- Jones R, Hahn I, Goss JP, Briddon PR, Oberg S. Structure and electronic properties of nitrogen defects in silicon. In: Gettering and Defect Engineering in Semiconductor Technology (Gadest) Proceedings of the 10th International Autumn Meeting. 2004, Berlin, Germany: Scitec Publications Ltd.
- Goss JP, Briddon PR, Sachdeva R, Jones R, Sque SJ. Quantum Mechanical Modeling of the Structure and Doping Properties of Defects in Diamond. In: 27th International Conference on the Physics of Semiconductors. 2004, Flagstaff, Arizona, USA: AIP.
- Coutinho J, Balsas A, Torres VJB, Briddon PR, Barroso M. Electronic levels of interstitial carbon and carbon-oxygen centers in SiGe alloys. In: E-MRS 2004: Symposium B, Material Science Issues in Advanced CMOS Source-Drain Engineering. 2004, Strasbourg: Materials Science and Engineering B: Elsevier.
- Bangert U, Gutierrez-Sosa A, Harvey A, Jones R, Fall CJ, Blumenau A, Briddon R. Electron energy loss spectroscopy of extended defects. In: Institute of Physics Conference Series: Proceedings of the Institute of Physics Electron Microscopy and Analysis Group Conference. 2004, Oxford, UK: Institute of Physics Publishing Ltd.
- Bangert U, Gutierrez-Sosa A, Harvey A, Jones R, Fall CJ, Blumenau A, Briddon R. Electron energy loss spectroscopy of extended defects. In: Electron Microscopy and Analysis 2003: Institute of Physics Electron Microscopy and Analysis Group Conference (EMAG). 2004, Oxford, UK: Taylor & Francis.
- Blumenau AT, Jones R, Oberg S, Briddon PR, Frauenheim T. Density functional based modelling of 30° partial dislocations in SiC. In: 10th International Conference on Silicon Carbide and Related Materials (ICSCRM 2003). 2004, Lyon, France: Materials Science Forum: Trans Tech Publications Ltd.
- Blumenau AT, Jones R, Oberg S, Briddon PR, Frauenheim T. Density functional based modelling of 30 degrees partial dislocations in SiC. In: 10th International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM 2003). 2004, Lyon, France: Trans Tech Publications Ltd.
- Iwata HP, Oberg S, Briddon PR. An ab initio study of intrinsic stacking faults in GaN. In: 10th International Conference on Silicon Carbide and Related Materials (ICSCRM 2003). 2004, Lyon, France: Materials Science Forum: Trans Tech Publications Ltd.
- Iwata HP, Oberg S, Briddon PR. An ab initio study of intrinsic stacking faults in GaN. In: 10th International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM 2003). 2004, Lyon, France: Trans Tech Publications Ltd.
- Coutinho J, Jones R, Oberg S, Briddon PR. The formation, dissociation and electrical activity of divacancy-oxygen complexes in Si. In: Physica B: Condensed Matter, 22nd International Conference on Defects in (ICDS-22). 2003, Aarhus, Denmark: Elsevier BV.
- Filhol J-S, Petit S, Jones R, Hourahine B, Frauenheim Th, Overhof H, Coutinho J, Shaw MJ, Briddon PR, Oberg S. Structure and electrical activity of rare-earth dopants in selected III-Vs. In: Materials Research Society Symposium - Proceedings. 2003, Boston, Massachusetts, USA: Materials Research Society.
- Iwata HP, Lindefelt U, Oberg S, Briddon PR. Stacking faults in silicon carbide. In: Physica B: Condensed Matter, 22nd International Conference on Defects in (ICDS-22). 2003, Aarhus, Denmark: Elsevier BV.
- Iwata H, Lindefelt U, Oberg S, Briddon PR. Stacking Fault - Stacking Fault Interactions and Cubic Inclusions in 6H-SiC: An Ab Initio Study. In: Materials Science Forum: 4th European Conference on Silicon Carbide and Related Materials. 2003, Linkoping, Sweden: Trans Tech Publications Ltd.
- Sque SJ, Jones R, Goss JP, Briddon PR. Shallow donors in diamond: Pnictogen and chalcogen hydrogen defects. In: 22nd International Conference on Defects in Semiconductors (ICDS-22). 2003, Aarhus, Denmark: Physical Review B: Condensed Matter and Materials Physics, Wiley-Blackwell.
- Eberlein TAG, Huggett L, Jones R, Briddon PR. Ro-vibrational modes of H2 in 4H-SiC and 2H-GaN. In: Physica B: Condensed Matter, 22nd International Conference on Defects in (ICDS-22). 2003, Aarhus, Denmark: Elsevier BV.
- Hourahine B, Jones R, Oberg S, Briddon PR, Frauenheim T. Platinum and gold dihydrides in silicon. In: Physica B: Condensed Matter, 22nd International Conference on Defects in (ICDS-22). 2003, Aarhus, Denmark: Elsevier BV.
- Pinho N, Coutinho J, Jones R, Briddon PR. Interaction between oxygen and single self-interstitials in silicon. In: Physica B: Condensed Matter, 22nd International Conference on Defects in (ICDS-22). 2003, Aarhus, Denmark: Elsevier BV.
- Lindefelt U, Iwata H, Oberg S, Briddon PR. Insight into the Degradation Phenomenon in SiC Devices from Ab Initio Calculations of the Electronic Structure of Single and Multiple Stacking Faults. In: Silicon Carbide and Related Materials: 4th European Conference on Silicon Carbide and Related Materials (ECSCRM). 2003, Linkoping, Sweden: Trans Tech Publications Ltd.
- Rayson MJ, Goss JP, Briddon PR. First principles calculation of zero-field splitting tensors. In: Physica B: Condensed Matter. 2003, Aarhus, Denmark: Elsevier BV.
- Iwata H, Lindefelt U, Oberg S, Briddon PR. Electronic Structure of Twin Boundaries in 3C-SiC, Si and Diamond. In: Materials Science Forum: 4th European Conference on Silicon Carbide and Related Materials. 2003, Linkoping, Sweden: Trans Tech Publications Ltd.
- Markevich VP, Peaker AR, Murin LI, Coutinho J, Torres VJB, Jones R, Oberg S, Briddon PR, Auret FD, Abrosimov NV. Electronic properties of vacancy-oxygen complexes in SiGe alloys. In: Physica B: Condensed Matter, 22nd International Conference on Defects in (ICDS-22). 2003, Aarhus, Denmark: Elsevier BV.
- Iwata H, Lindefelt U, Oberg S, Briddon PR. Electronic Properties of Stacking Faults in 15R-SiC. In: Materials Science Forum: 4th European Conference on Silicon Carbide and Related Materials. 2003, Linkoping, Sweden: Trans Tech Publications Ltd.
- Iwata H, Lindefeit U, Oberg S, Briddon PR. Effective Mass of Electrons in Quantum-Well-Like Stacking-Fault Gap States in Silicon Carbide. In: Materials Science Forum: 4th European Conference on Silicon Carbide and Related Materials. 2003, Linkoping, Sweden: Trans Tech Publications Ltd.
- Martsinovich N, Rosa AL, Heggie MI, Ewels CP, Briddon PR. Density-functional theory calculations on H defects in Si. In: Physica B: Condensed Matter, 23rd International Conference on Low Temperature Physics. 2003, Hiroshima, Japan: Elsevier BV.
- Gutierrez-Sosa A, Bangert U, Fall CJ, Jones R, T Blumenau A, Briddon PR, Frauenheim T. Combined experimental and theoretical study of EEL spectroscopy of dislocations in wide band gap semiconductors. In: Microscopy of Semiconducting Materials: Conference on Microscopy of Semiconducting Materials. 2003, Cambridge, UK: Institute of Physics Publishing.
- Blumenau AT, Jones R, Oberg S, Briddon PR, Frauenheim T. Basal plane partial dislocations in silicon carbide. In: Physica B: Condensed Matter, 22nd International Conference on Defects in (ICDS-22). 2003, Aarhus, Denmark: Elsevier BV.
- Torres VJB, Coutinho J, Briddon PR. Ab initio modeling of N-H, P-H and As-H defects in ZnSe. In: Physica B: Condensed Matter, 22nd International Conference on Defects in (ICDS-22). 2003, Aarhus, Denmark: Elsevier BV.
- Coutinho J, Torres VJB, Briddon PR. Ab initio modeling of Be-H and Zn-H complexes in Si. In: Physica B: Condensed Matter, 22nd International Conference on Defects in (ICDS-22). 2003, Aarhus, Denmark: Elsevier BV.
- Iwata H, Lindefelt U, Oberg S, Briddon PR. Theoretical study of cubic polytype inclusions in 4H-SiC. In: International Conference on Silicon Carbide and Related Materials. 2002, Tsukuba, Japan: Trans Tech Publications Ltd.
- Iwata H, Lindefelt U, Oberg S, Briddon PR. Theoretical calculation of stacking fault energies in silicon carbide. In: International Conference on Silicon Carbide and Related Materials. 2002, Tsukuba, Japan: Trans Tech Publications Ltd.
- Iwata H, Lindefelt U, Oberg S, Briddon PR. Stacking fault - Stacking fault interactions and cubic inclusions in 6H-SiC: an ab initio study. In: Silicon Carbide and Related Materials: 4th European Conference on Silicon Carbide and Related Materials (ECSCRM). 2002, Linkoping, Sweden: Trans Tech Publications Ltd.
- Iwata H, Lindefelt U, Oberg S, Briddon PR. Electronic structure of twin boundaries in 3C-SiC, Si and diamond. In: Silicon Carbide and Related Materials: 4th European Conference on Silicon Carbide and Related Materials (ECSCRM). 2002, Linkoping, Sweden: Trans Tech Publications Ltd.
- Iwata H, Lindefelt U, Oberg S, Briddon PR. Electronic properties of stacking faults in 15R-SiC. In: Silicon Carbide and Related Materials: 4th European Conference on Silicon Carbide and Related Materials (ECSCRM). 2002, Linkoping, Sweden: Trans Tech Publications Ltd.
- Iwata H, Lindefelt U, Oberg S, Briddon PR. Electronic localization around stacking faults in silicon carbide. In: International Conference on Silicon Carbide and Related Materials. 2002, Tsukuba, Japan: Trans Tech Publications Ltd.
- Iwata H, Lindefelt U, Oberg S, Briddon PR. Effective mass of electrons in quantum-well-like stacking-fault gap states in silicon carbide. In: Silicon Carbide and Related Materials: 4th European Conference on Silicon Carbide and Related Materials (ECSCRM). 2002, Linkoping, Sweden: Trans Tech Publications Ltd.
- Pajot B, Fall CJ, Cantin JL, von Bardeleben HJ, Jones R, Briddon PR, Gendron F. Low-frequency vibrational spectroscopy in SiC polytypes. In: Ecscrm 2000 Silicon Carbide and Related Materials: Proceedings of the 3rd European Conference on Silicon Carbide and Related Materials. 2000, Kloster Banz, Germany: Trans Tech Publications.
- Coomer BJ, Leary P, Budde M, Nielsen BB, Jones R, Oberg S, Briddon PR. Vacancy-hydrogen complexes in germanium. In: Symposium A on Defects in Silicon-Hydrogen at the 1998 Spring Meeting of the European Materials Research Society. 1999, Strasbourg, France: Elsevier.
- Resende A, Jones R, Oberg S, Briddon PR. The structural properties of transition metal hydrogen complexes in silicon. In: Symposium A on Defects in Silicon - Hydrogen at the 1998 Spring Meeting of the European-Materials-Research-Society. 1999, Strasbourg, France: Elsevier.
- Jones R, Resende A, Oberg S, Briddon PR. The electronic properties of transition metal hydrogen complexes in silicon. In: Symposium A on Defects in Silicon - Hydrogen at the 1998 Spring Meeting of the European-Materials-Research-Society. 1999, Strasbourg, France: Elsevier.
- Coomer BJ, Resende A, Goss JP, Jones R, Oberg S, Briddon PR. The divacancy in silicon and diamond. In: 20th International Conference on Defects in Semiconductors (ICDS-20). 1999, Berkeley, CA: Elsevier.
- Hourahine B, Jones R, Safonov AN, Oberg S, Briddon PR, Estreicher SK. Optically active hydrogen dimers in silicon. In: 20th International Conference on Defects in Semiconductors (ICDS-20). 1999, Berkeley, CA: Elsevier.
- Latham CD, Jones R, Haugk M, Frauenheim T, Briddon PR. Mechanism for dicarbon defect formation in AlAs and GaAs. In: ICDS-20: Proceedings of the 20th International Conference on Defects in Semiconductors. 1999, Berkeley, CA, USA: Elsevier.
- Markevich VP, Murin LI, Suezawa M, Lindstrom JL, Coutinho J, Jones R, Briddon PR, Oberg S. Local vibrational mode bands of V-O-H complexes in silicon. In: 20th International Conference on Defects in Semiconductors (ICDS-20). 1999, Berkeley, CA: Elsevier.
- Jones R, Elsner J, Haugk M, Gutierrez R, Frauenheim T, Heggie MI, Oberg S, Briddon PR. Interaction of oxygen with threading dislocations in GaN. In: International Conference on Extended Defects in Semiconductors (EDS 98). 1999, Jaszowiec, Poland: John Wiley & Sons, Inc.
- A. Resende, J. Goss, P. R. Briddon, S. Öberg and R. Jones. Theory of gold-hydrogen complexes in silicon. In: Defects in Semiconductors - ICDS-19, Pts 1-3. 1997.
- R. Jones, J. P. Goss, P. R. Briddon and S. Öberg. Breakdown of the vacancy model for impurity-vacancy defects in diamond. In: Defects in Semiconductors - ICDS-19, Pts 1-3. 1997.
- J. P. Goss, R. Jones, S. J. Breuer, P. R. Briddon and S. Öberg. A first principles study of interstitial Si in diamond. In: Defects in Semiconductors - ICDS-19, Pts 1-3. 1997.
- R. Jones, J. Goss, S. Öberg, P. R. Briddon and A. Resende. Theory of the NiH2 complex in Si and the CuH2 complex in GaAs. In: ICDS-18 - Proceedings of the 18th International Conference on Defects in Semiconductors, Pts 1-4. 1995.
- J. Goss, A. Resende, R. Jones, S. Öberg and P. R. Briddon. Ni complexes in diamond. In: ICDS-18 - Proceedings of the 18th International Conference on Defects in Semiconductors, Pts 1-4. 1995.
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Software
- Hagon JP, Briddon PR. AIMview: a visualization system and STEM simulator for users of the AIMpro density functional electronic structure program. [program]. 2009.